Electrical Characteristics of SiO<sub>2</sub> Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

Yang, Xiangyu; Lee, Bongmook; Misra, Veena

doi:10.1109/ted.2016.2565665

Cited by 25 publications

(12 citation statements)

References 16 publications

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“…As shown in Fig. 5(d), to our knowledge, this work is the record low published D it in SiO 2 /SiC system, [9,14,[24][25][26][27][28][29][30][31] confirming the effectiveness of high-pressure oxidation in forming high quality SiO 2 /SiC stack. And it is found that the breakdown field for the 1000-W sample could reach 10 MV/cm, as shown in Fig.…”

Section: Sic Mos Capacitor Characterizationsupporting

confidence: 58%

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation*

Liu¹,

Hao²,

You³

et al. 2020

Chinese Phys. B

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The microwave plasma oxidation under the relatively high pressure (6 kPa) region is introduced into the fabrication process of SiO2/4H-SiC stack. By controlling the oxidation pressure, species, and temperature, the record low density of interface traps (∼ 4 × 1010 cm−2⋅eV−1@Ec − 0.2 eV) is demonstrated on SiO2/SiC stack formed by microwave plasma oxidation. And high quality SiO2 with very flat interface (0.27-nm root-mean-square roughness) is obtained. High performance SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) with peak field effect mobility of 44 cm−2 ⋅eV−1 is realized without additional treatment. These results show the potential of a high-pressure plasma oxidation step for improving the channel mobility in SiC MOSFETs.

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Section: Sic Mos Capacitor Characterizationsupporting

confidence: 58%

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation*

Liu¹,

Hao²,

You³

et al. 2020

Chinese Phys. B

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“…To reduce the interface trap density for further improving the device performances, a thin insulator with a high dielectric constant and a large bandgap was deposited by atomic layer deposition (ALD) technology [105][106][107][108][109]. Several ALD materials such as Al 2 O 3 , AlN, and ZrO 2 have also exhibited the ability to improve the properties of power electronic components significantly [110][111][112].…”

Section: Sic Critical Stepmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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“…The controllability of the charge at the SiO2 / 4H-SiC interface does not affect the CSSJ operation. This is because, decades of research has reduced this charge from 5 × 10 12 cm -2 [26] to 3 × 10 11 cm -2 [27], i.e. to < 10 % of NI of (9).…”

Section: Device Practicabilitymentioning

confidence: 99%

Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

Akshay

Karmalkar

2020

IEEE J. Electron Devices Soc.

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We discuss details of the Charge Sheet SuperJunction (CSSJ) in 4H-Silicon Carbide (SiC). This device was earlier proposed in Si material. A CSSJ is obtained by replacing the p-pillar of a SJ by a bilayer insulator, e.g. Al2O3 / SiO2; the inter-layer interface of this insulator has a negative charge-sheet, whose magnitude is easily controlled via the insulator deposition temperature. This charge-sheet depletes the n-pillar. Two potential advantages of this structural modification are brought out. First, it can avoid the problems related to SiC SJ's p-pillar fabrication. Second, it can lower the specific-on resistance, RONSP, below that of SJ by 5−45 %, since SiC technology allows the insulator to be thinner than the p-pillar. The critical field, EC, in SiC is > 10 times higher than that in Si. We give an analytical breakdown voltage, VBR, model, which shows that the VBR sensitivity to charge imbalance due to inevitable process variations is inversely proportional to EC; hence, this sensitivity of CSSJ in SiC is > 10 times lower than that in Si. On the other hand, we give numerical simulations to establish that, in spite of EC differences, the SiC CSSJ inherits the advantage of upto 15% higher VBR compared to SiC SJ, from its Si counterparts. We show how our prior analytical procedure of designing a SJ can be adapted to design a CSSJ having a lower RONSP than the SJ, at a specified VBR in 1-10 kV range and charge imbalance  20 %. Our work should strengthen the motivation for fabricating the CSSJ in SiC.

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Electrical Characteristics of SiO₂ Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

Cited by 25 publications

References 16 publications

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation*

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation*

Review of Silicon Carbide Processing for Power MOSFET

Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

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Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

Cited by 25 publications

References 16 publications

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation*

High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation*

Review of Silicon Carbide Processing for Power MOSFET

Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design

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Electrical Characteristics of SiO₂ Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal