Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing

Huang, Szu-Wei; Hwu, Jenn–Gwo

doi:10.1109/ted.2003.813904

Cited by 38 publications

(10 citation statements)

References 28 publications

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“…electrons originate commonly from ͑1͒ the interface states, ͑2͒ traps in depletion region, and ͑3͒ bottom electrode of substrate. 12 In this work, the generation of electrons from the bottom electrode of substrate or the traps in the depletion region is negligible because the substrate is p-type singlecrystal Si. Therefore, the saturatelike leakage current was generated mainly from the interface states ͑as illustrated in the bottom right inset of Fig.…”

Section: Fig 1 Plot Of Current Density ͑J͒ Vs Bias Voltage For the Siomentioning

confidence: 99%

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Tsai

Chang

Liu

et al. 2008

Applied Physics Letters

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In this work, the supercritical CO 2 fluid mixed with cosolvents is introduced to terminate the traps in electron-gun ͑e-gun͒ evaporation deposited silicon oxide ͑SiO x ͒ film at 150°C. After the proposed treatment, the SiO x film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 10 2 times and the retention time attains to 2 ϫ 10 3 s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps.

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Section: Fig 1 Plot Of Current Density ͑J͒ Vs Bias Voltage For the Siomentioning

confidence: 99%

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Tsai

Chang

Liu

et al. 2008

Applied Physics Letters

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“…To achieve these qualities, high-κ dielectrics are often used and combined with other materials in a bilayer structure, which can be further improved by surface treatment. , In this context, Al 2 O 3 has been considered a promising dielectric because of its high dielectric constant (7.5–15) and high thermal stability. While Al 2 O 3 has been deposited using magnetron sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), the anodization process is particularly interesting for flexible electronics owing to its simplicity, low cost, low temperature, potential for R2R development, and excellent film thickness control in nanometric scale . Furthermore, the electrical properties of anodized films are shown to be better when compared with other techniques. , …”

Section: Introductionmentioning

confidence: 99%

Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

et al. 2019

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Peer reviewed versionCyswllt i'r cyhoeddiad / Link to publication Dyfyniad o'r fersiwn a gyhoeddwyd / Citation for published version (APA): ABSTRACTThe present study reports a two-level multivariate analysis to optimise the production of anodised aluminium oxide (Al2O3) dielectric films for zinc oxide thin-film transistor (TFTs).Fourteen performance parameters were measured and Analysis Of Variance (ANOVA) of the combined responses has been applied to identify how the Al2O3 dielectric fabrication process influences the electrical properties of the TFTs. Using this approach, the levels for the manufacturing factors to achieve optimal overall device performance have been identified and ranked. The cross-checked analysis of the TFT performance parameters demonstrated that the appropriate control of the anodisation process can have a higher impact on TFT performance than the use of traditional methods of surface treatment of the dielectric layer. Flexible electronics applications are expected to grow substantially over the next 10 years. Given the complexity and challenges of new flexible electronics components, this 'multivariate' approach could be adopted more widely by the industry to improve the reliability and performance of such devices.

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“…To overcome those problems, researchers have begun to search for alternative oxides with a higher dielectric constant (k) larger than 3.9 such as AlN, HfO 2 , SiO 2 /HfO 2 , MgO, and oxidized Ta 2 Si. (8)(9)(10) It was reported that Al 2 O 3 can be prepared by sputtering (11), evaporation (12), or atomic layer deposition (ALD) (13,14). For high-k dielectric on SiC, the conduction band offset between high-k and SiC is relative small (15).…”

Section: Introductionmentioning

confidence: 99%

SiO₂ Thickness Dependency of C-V Dispersion in Stacked Al/HfO₂/SiO₂/4H-SiC Capacitor

Hsu

Hwu

2012

ECS Trans.

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The impact of a thin interfacial SiO2 layer inserted between HfO2 and SiC for the improvement of electrical property was investigated. Regarding the material choice of dielectric on SiC, two issues will be presented in this work. One demonstrates the border trap induced C-V frequency dispersion when HfO2 was directly deposited on SiC. The other deals with effect of carbon interstitial or bulk trap in SiC surface close to the SiC/SiO2 interface. The thickness of SiO2 interfacial layer is a critical issue. The defects induced by thicker SiO2 layer would affect the inversion region of substrate. With adopted ultrathin SiO2 (2 nm) layer between HfO2 and SiC, the remarkable frequency dispersion can be significantly reduced. The leakage current with ultrathin SiO2 layer reduced about two orders as compared with only HfO2 on SiC. The reliability of the device with ultrathin SiO2 layer was also improved.

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Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing

Cited by 38 publications

References 28 publications

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

SiO₂ Thickness Dependency of C-V Dispersion in Stacked Al/HfO₂/SiO₂/4H-SiC Capacitor

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Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing

Cited by 38 publications

References 28 publications

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

SiO2 Thickness Dependency of C-V Dispersion in Stacked Al/HfO2/SiO2/4H-SiC Capacitor

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SiO₂ Thickness Dependency of C-V Dispersion in Stacked Al/HfO₂/SiO₂/4H-SiC Capacitor