Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications

Abstract

In this work, the supercritical CO 2 fluid mixed with cosolvents is introduced to terminate the traps in electron-gun ͑e-gun͒ evaporation deposited silicon oxide ͑SiO x ͒ film at 150°C. After the proposed treatment, the SiO x film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 10 2 times and the retention time attains to 2 ϫ 10 3 s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps.

Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications

“…Up to now, the resistance switching effect has been observed in various materials including perovskite oxides, 1 chalcogenide materials, 2 and oxide materials such as SiO, ZnO, NiO, and TiO 2 . [3][4][5][6][7][8] Among these materials, oxide materials are most widely investigated and the resistance switching is generally considered as a result of the formation/rupture of the localized conducting filament. 1 To improve the switching behaviors, some methods have been proposed to stabilize the location of filament formation, such as doping Gd in TiO 2 film, 9 and embedding metal nanocrystals in the switching layer.…”