Electrical Characterization of Aluminum Nitride Films on Silicon Grown by Chemical Vapor Deposition

Abstract

Aluminum nitride (AlN) films were grown on silicon (Si) substrates by chemical vapor deposition (CVD). The films were characterized by scanning electron microscopy (SEM) and x-ray diffraction (XRD). The refractive index of the AlN films was determined by ellipsometry. Current-voltage and current-temperature characteristics were performed on metal-AlN-p+ Si structures with Pt, Au and Al as metal electrodes. The characteristics showed that at high field and high temperature the carrier conduction mechanism in the film was dominated by Frenkel-Poole emission. The relative dielectric constant of the AlN films was estimated to be 9.66+0.3 from capacitance-voltage-frequency (C-V-f) measurements on Au-AlN-p+ Si.

Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride

“…Frequency dispersion of capacitance in accumulation is also observed by several other groups for AlN samples. 25,26 A flatband voltage of Ϫ4.86 V was recorded at a flatband capacitance of 42.52 pF using the C -V curve at 10 kHz.…”