Electrical characterization of Cu(In,Ga)Se₂thin films peeled off from Mo-coated soda-lime glass substrate by AC Hall measurement

Abstract

We have developed a new evaluation method for electrical properties of Cu(In,Ga)Se 2 (CIGS) grown on a Mo-coated soda-lime glass (SLG). The method consists of the peel-off process and the AC Hall measurement, which enables us to evaluate CIGS films grown on the Mo electrode. It was found, from the measurement, that the hole concentration of CIGS grown on a Mo-coated SLG was approximately two orders of magnitude higher than that on a SLG, suggesting the Na-doping effect. Furthermore, the hole mobility of 0.47 cm 2 /(V&s) was simultaneously measured, even though the film was deposited on the Mo electrode.

Cu 2 ZnSnS 4 -based thin films and solar cells by rapid thermal annealing processing

“…Optical band gap measurements were achieved by transferring the CZTS thin film layers from Mocoated glass to pure cleaned glass by a peel-off technique. A similar procedure had been previously used for CIGS materials [27]. Photoluminescence measurements were performed at room temperature using an excitation laser at 670 nm and a 1/4 m spectrograph coupled to an InGaAs diode array.…”

Impact of roll-over-shaped current–voltage characteristics and device properties of Ag(In,Ga)Se2 solar cells

“…We can evaluate an AIGS layer grown on the Mo-coated SLG substrate using the peeloff process to separate the AIGS layer from the Mo-coated SLG substrate. 19) The AC Hall measurement using a Toyo Corporation ResiTest8400 system was conducted by the van der Pauw method. The amplitude and frequency of the applied magnetic field were set at 0.74 T RMS and 50 mHz, respectively.…”

“…The hole concentration obtained by the same method for the CIGS layer grown on the Mo-coated SLG substrate was 1.6 × 10 16 cm −3 . 19) Compared with the CIGS layer, the AIGS layer showed a much lower hole concentration. In addition, there was a great difference between the carrier concentrations of the AIGS layer evaluated by the AC Hall and C-V measurements.…”

“…To solve these two problems, we have developed a new evaluation method that consists of the AC Hall measurement and peel-off process to separate the AIGS layer from the Mo-coated SLG substrate. 19) Table II shows the AC Hall and C-V measurement results for CIGS and AIGS deposited on the Mo-coated SLG substrate. Both the CIGS and AIGS layers showed p-type conductivity.…”

“…The hole concentration of CIGS layers is normally on the order of 10 16 cm −3 , 19,[32][33][34][35][36] and no roll-over-shaped J-V characteristics have been observed. However, the roll-over shape has been reported for CIGS solar cells without the Na doping effect.…”