1998
DOI: 10.1088/0268-1242/13/4/006
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Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions

Abstract: The deep levels existing in fully ion implanted and rapidly thermally annealed p + n InP junctions were investigated in this work. The samples were co-implanted with magnesium and silicon. An additional phosphorus implantation was carried out in some samples to study its effect. In order to characterize the traps, deep level transient spectroscopy (DLTS) and the capacitance-voltage transient technique (CVTT) were used. For a (control) sample implanted with Mg only, four deep electron levels located at the uppe… Show more

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Cited by 2 publications
(5 citation statements)
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“…We previously carried out their characterization and a tentative assignment for their physical nature was proposed. 13,14 For the He implantationisolated samples, in addition to the two above traps, a new deep level, E8, is observed, whose emission energy is 0.19 eV below the conduction band. An average E8 concentration was estimated by DLTS around 1.5ϫ10 13 cm Ϫ3 at the scanned depletion region nearest the junction plane ͑V R ϭ0.5 V, ⌬Vϭ0.5 V͒.…”
mentioning
confidence: 97%
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“…We previously carried out their characterization and a tentative assignment for their physical nature was proposed. 13,14 For the He implantationisolated samples, in addition to the two above traps, a new deep level, E8, is observed, whose emission energy is 0.19 eV below the conduction band. An average E8 concentration was estimated by DLTS around 1.5ϫ10 13 cm Ϫ3 at the scanned depletion region nearest the junction plane ͑V R ϭ0.5 V, ⌬Vϭ0.5 V͒.…”
mentioning
confidence: 97%
“…Devices were protected by a mask during He implantation. In previous works, 13,14 we have carried out a detailed study for identical fully implanted junctions and, hence, the intentionally doped p ϩ -and n-type layers of the junction were also obtained by Mg and Si ion implantation, respectively, fabricated on identical substrates with identical implantation parameters and annealing conditions. The only difference with the current He implantation-isolated samples is that, in those samples, isolation among devices was achieved by wet etching using a solution of 1H 2 O 2 :1H 2 SO 4 during 10 min, giving rise to mesa structures.…”
mentioning
confidence: 99%
“…In previous works, 13,16,17 we have studied in detail the emission properties of the three electron traps ͑E6-, E7-, and E8-labeled deep levels͒ detected by majority DLTS measurements in the He-ion implantation-isolated samples. Yet, the existence of minority ͑hole͒ traps was not investigated.…”
Section: Resultsmentioning
confidence: 99%
“…We previously carried out their characterization and proposed a tentative assignment for their physical nature. 16,17 Besides the electron deep levels, no hole trap is observed in the control samples. For the He implantation-isolated samples, none of the above electron traps is detected in the minority DLTS spectra and two new deep levels-an electron trap, E8, and a hole trap, H2-are observed.…”
Section: A Emission Properties Of the Trapsmentioning
confidence: 97%
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