Electrical characterization of Si/InN nanowire heterojunctions

Alagha, S.; Zhao, Songrui; Mi, Zetian; Watkins, Simon P.; Kavanagh, K. L.

doi:10.1088/1361-6641/aa9b57

Cited by 5 publications

(4 citation statements)

References 33 publications

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“…In case of n‐type Si, the samples are in forward direction for negative voltages which implies a negative bias applied to the Si substrate. This rectifying behavior, also reported by Alagha et al, leads to the conclusion that an energy barrier exists in the electrical band structure for both doping types.…”

Section: Iu‐curves Of Inn Nws On Si In the Dark And At Rtsupporting

confidence: 81%

“…This assumption is reasonable, since measurements on Si‐doped InN NWs do not show a significant change in the electrical characteristics (S3, Supporting Information). Under this assumption, the experimental data in the forward bias regime, where the current is no longer dominated by the shunt resistance and not yet by the series resistance, can be modeled by the thermionic emission (TE) theory . In this voltage region, the current density can be described by

j = \underset{j_{normalS}}{true \underset{⏟}{{A^{*}}^{} T^{2} \exp (- \frac{e Φ_{b}}{k T})}} true[\exp true(\frac{e U}{η k T} true) - 1 true]

in which A * is the effective Richardson constant, T the temperature, e the electron charge, k the Boltzmann constant, Ф b the potential barrier height, η the ideality factor, and j S the saturation current density.…”

Section: Iu‐curves Of Inn Nws On Si In the Dark And At Rtmentioning

confidence: 99%

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Electrical Characterization of InN Nanowire/Si Heterojunctions

Weiszer

Jörg

Kolhep

et al. 2019

Physica Status Solidi (b)

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This report deals with the electrical properties of a heterojunction between self‐assembled InN nanowires (NWs) grown by plasma‐assisted molecular beam epitaxy and Si (111) with different doping types and concentrations. Multiple NWs are contacted in a vertical sandwich structure and current–voltage (IU) measurements show a rectifying behavior which strongly depends on the doping level of the Si substrate. Comparable results are obtained for single NWs contacted with a conductive atomic force microscope tip. The transport processes can be described by thermionic emission theory of a Schottky diode. However, field emission and recombination can not be neglected, especially for high doping concentrations of the Si substrate. The temperature dependence of the barrier height and the ideality factor have been determined by measuring IU‐curves from 200 K up to 300 K. Furthermore, electrical changes based on aging and on different environmental conditions, like contact with water, are discussed. The underlying band diagram of the InN/Si heterojunction has been simulated with the software package Nextnano++ and is in agreement with the experimental data. The simulations consider both polarities of the InN NWs and both doping types of the Si substrates.

show abstract

Section: Iu‐curves Of Inn Nws On Si In the Dark And At Rtsupporting

confidence: 81%

j = \underset{j_{normalS}}{true \underset{⏟}{{A^{*}}^{} T^{2} \exp (- \frac{e Φ_{b}}{k T})}} true[\exp true(\frac{e U}{η k T} true) - 1 true]

Section: Iu‐curves Of Inn Nws On Si In the Dark And At Rtmentioning

confidence: 99%

Electrical Characterization of InN Nanowire/Si Heterojunctions

Weiszer

Jörg

Kolhep

et al. 2019

Physica Status Solidi (b)

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show abstract

“…23 The type-III heterojunctions based on traditional bulk materials, such as Si, Ge and III-V semiconductors have been widely studied. 24,25 However, the function of these devices maybe restricted by the dislocations result from lattice mismatch. Although nano-scale materials can be applied to solve this problem to some extent, however the increase of the bandgap will depress the performance of the devices.…”

Section: Introductionmentioning

confidence: 99%

“…Although nano-scale materials can be applied to solve this problem to some extent, however the increase of the bandgap will depress the performance of the devices. 25 2D semiconductors have also attracted much attention to build broken gap heterojunctions since they are free from the lattice mismatch and dangling bond, thus contributing to the superior characteristics of 2D vdW heterojunctions. 22,26 However, it requires a large electric eld across the heterojunction to change type II alignment of MoS 2 /WSe 2 heterostructures into type III alignment.…”

Section: Introductionmentioning

confidence: 99%