Abstract:The dc conductivity and thermoelectric power of a-Se8 o _ x G a 2 o T e x (x = 0, 5,10, 15 and 20) thin films were reported in the present work. The free charge carrier concentration was calculated with the help of dc conductivity and thermoelectric power measurements. The calculated values of free charge carrier concentration were used to evaluate the free charge carrier mobility from which grain boundary potential was evaluated. The results are interpreted in terms of small polaron hopping, the structure of … Show more
“…28 Tripathi et al 30 have reported the optical properties of nanostructured selenium-tellurium thin lms grown by a thermal evaporation technique. Several researchers [31][32][33] have reported the electrical and transport properties of chalcogenide glasses. A structural study of Se-Te glasses using Raman spectroscopy and rst principles methods has been recently reported 34 35,36 on Se-Te glasses indicate the presence of chain like structures with a signicant contribution of Se n and Te n fragments.…”
First principle calculations have been performed to study the characteristic properties of SenTen (n=5-10) clusters. Present study reveals that the properties of these small clusters are consistent with the properties...
“…28 Tripathi et al 30 have reported the optical properties of nanostructured selenium-tellurium thin lms grown by a thermal evaporation technique. Several researchers [31][32][33] have reported the electrical and transport properties of chalcogenide glasses. A structural study of Se-Te glasses using Raman spectroscopy and rst principles methods has been recently reported 34 35,36 on Se-Te glasses indicate the presence of chain like structures with a signicant contribution of Se n and Te n fragments.…”
First principle calculations have been performed to study the characteristic properties of SenTen (n=5-10) clusters. Present study reveals that the properties of these small clusters are consistent with the properties...
“…It is found that Ga addition can be alloyed with most materials and has been used as a component of low melting alloys [22] because it has a low melting point (301 K) and a very high boiling point (2676 K) it has also become an attractive material as a substrate because of its good lattice matching with solid solutions of III-VI semiconductors, which are useful for the fabrication of solid state devices. Several authors have been investigated some physical properties of gallium doped chalcogenide glasses in details [18][19][20][21]23].…”
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