Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

Werner, Florian; Limbach, F.; Carsten, Michael; Denker, Christian; Malindretos, J.; Rizzi, A.

doi:10.1021/nl8036799

Cited by 78 publications

(84 citation statements)

References 21 publications

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“…Furthermore, also for InN nanowires the surface conductance can govern the electrical transport. 12,13 If such a surface layer were-within a certain diameter range-relevant for the overall transport properties of our InAs nanowires, one might naively expect that the resistance would be proportional to the inverse of the diameter, i.e., a weaker dependence than we find. But this reasoning only holds for constant electron density and mobility, whereas we will show below that both depend on diameter.…”

Section: Diameter-dependent Conductance Of Inas Nanowiresmentioning

confidence: 70%

Diameter-dependent conductance of InAs nanowires

Scheffler

Nadj-Perge

Kouwenhoven

et al. 2009

Journal of Applied Physics

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Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. Contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare different nanowire batches. At room temperature we find a diameter-independent conductivity for diameters larger than 40 nm, indicative of three-dimensional diffusive transport. For smaller diameters, the resistance increases considerably, in coincidence with a strong suppression of the mobility. From an analysis of the effective charge carrier density, we find indications for a surface accumulation layer.

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Section: Diameter-dependent Conductance Of Inas Nanowiresmentioning

confidence: 70%

Diameter-dependent conductance of InAs nanowires

Scheffler

Nadj-Perge

Kouwenhoven

et al. 2009

Journal of Applied Physics

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“…8,[19][20][21][22][23][24][25][26][27][28][29][30] For example, in general, the currently reported nominally undoped InN is n-type degenerate, with the residual electron densities in the range of ∼ 1 × 10 18 cm −3 , or higher. 8,11,25,[31][32][33][34] Moreover, it has been generally observed that there exists a very high electron concentration (∼ 1 × 10 13−14 cm −2 ) at both the polar and nonpolar grown surfaces of InN films, 19,35 and the Fermi-level (E F ) is pinned deep into the conduction band at the surfaces; 19,20,29,30 similar electron accumulation profile has also been measured at the lateral nonpolar grown surfaces of [0001]-oriented wurtzite InN nanowires. 8,11,21,22,25,36 In this regard, significant efforts have been devoted to understanding the fundamental surface charge properties of InN.…”

mentioning

confidence: 69%

“…In terms of nonpolar InN surface, recent studies suggest that the surface electron accumulation may depend critically on the surface states, impurities, stoichiometry, and polarity; 27,37 and the absence of electron accumulation at nonpolar surface has been predicted. 23,27 In experiments, however, only recent cross-sectional scanning photoelectron microscopy and spectroscopy studies at nonpolar cleaved InN surface exhibits the unpinned E F , 38,39 while in general the electron accumulation is prevalently observed at nonpolar InN surface; 22,34,35 the electron accumulation issue at nonpolar InN surface had remained elusive.…”

mentioning

confidence: 99%

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

Zhao

Kibria

et al. 2012

Phys. Rev. B

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In the present work, photoluminescence characteristics of intrinsic and Si-doped InN nanowires were studied in details. For intrinsic InN nanowires, the emission is due to band-to-band carrier recombination with the peak energy at ∼ 0.64 eV (at 300 K), and may involve free-exciton emission at low temperatures. The PL spectra exhibit a strong dependence on optical excitation power and temperature, which can be well characterized by the presence of very low residual electron density, and the absence or negligible level of surface electron accumulation. In comparison, the emission of Si-doped InN nanowires is characterized by the presence of two distinct peaks located at ∼ 0.65 eV and ∼ 0.73 − 0.75 eV (at 300 K). Detailed studies further suggest that these low-energy and highenergy peaks can be ascribed to band-to-band carrier recombination in the relatively low-doped nanowire bulk region and Mahan exciton emission in the high-doped nanowire near-surface region, respectively; this is a natural consequence of dopants surface segregation. The resulting surface electron accumulation and Fermi-level pinning, due to the enhanced surface doping, is confirmed by angle-resolved X-ray photoelectron spectroscopy measurements on Si-doped InN nanowires, which is in direct contrast to the absence, or negligible level of surface electron accumulation in intrinsic InN nanowires. This work has elucidated the role of charge carrier concentration and distribution on the optical properties of InN nanowires.

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“…Considering that charge transport in small diameter NW (<60 nm) occurs mainly through the single crystal core, 49 the conductivity of SFLS NWs will mainly depend on charge carrier scattering from defects as described by the Eq. 4 50 :…”

Section: Eq 2 ( ) = +mentioning

confidence: 99%

Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock

Constantinou¹,

Rigas

Castro

et al. 2016

ACS Nano

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Semiconducting nanowires (NWs) are becoming essential nano-building blocks for advanced devices from sensors to energy harvesters, however their full technology penetration requires large scale materials synthesis together with efficient NW assembly methods. We demonstrate a scalable one-step solution process for the direct selection, collection and ordered assembly of silicon NWs with desired electrical properties from a poly-disperse collection of NWs obtained from a Supercritical Fluid-Liquid-Solid growth process. Dielectrophoresis (DEP) combined with impedance spectroscopy provides a selection mechanism at high signal frequencies (>500 kHz) to isolate NWs with the highest conductivity and lowest defect density. The technique allows simultaneous control of five key parameters in NW assembly: selection of electrical properties, control of NW length, placement in pre-defined electrode areas, highly preferential orientation along the device channel and control of NWs deposition density from few to hundreds per device. Direct correlation between DEP signal frequency and deposited NWs conductivity is directly confirmed by field-effect transistor and conducting-AFM data. Fabricated NW transistor devices demonstrate excellent performance with up to 1.6 mA current, 106-107 on/off ratio and hole-mobility of 50 cm2 V-1 s-1

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Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

Cited by 78 publications

References 21 publications

Diameter-dependent conductance of InAs nanowires

Diameter-dependent conductance of InAs nanowires

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock

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