Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

D’Ortenzi, L.; Monsù, R.; Cara, Eleonora; Fretto, Matteo; Kara, Seifeddine A; Rezvani, Seyed Javad; Boarino, Luca

doi:10.1186/s11671-016-1689-x

Cited by 7 publications

(5 citation statements)

References 26 publications

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“…In [17], the authors discuss as a possible explanation of this advantageous feature, the intrinsic low resistivity of FIBID-Pt and the Ga-ion induced local implantation of the NW under the Pt contact. This is consistent with the results reported on FIBID-Pt contacts on Si NWs [18], on ZnS NWs [19] and on ZnO NWs [20].The ohmic nature of Pt contacts to NWs allows to assume that the resistance measured in two-point configuration is dominated by the NW resistance and to derive an estimation of the resistivity of single NWs.…”

Section: Electrical Characterizationsupporting

confidence: 88%

Direct growth of germanium nanowires on glass

Beretta

Bosi²,

Seravalli³

et al. 2020

Nanotechnology

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We report a detailed characterization of Ge NWs directly grown on glass by a MOVPE system, showing how different growth parameters can affect the final outcome and comparing NWs grown on a monocrystalline Ge(111) substrate with NWs grown on amorphous glass. Our experimental results indicate that the choice of the substrate does not affect any of the relevant morphological, crystallographic or electrical properties of Ge NWs. Lengths are in the 20-30 micrometer range with minimal tapering, while growth rates are very similar to to NWs grown on Ge(111); TEM and Raman characterization show a very good crystallinity of measured nanostructures. We have also analyzed the growth process on glass and we were able to reach a conclusion on the specific growth mechanism for Ge NWs on amorphous substrates. Our findings demonstrate that glass is a valid option as cheap substrate for the mass production of these nanostructures.

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Section: Electrical Characterizationsupporting

confidence: 88%

Direct growth of germanium nanowires on glass

Beretta

Bosi²,

Seravalli³

et al. 2020

Nanotechnology

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“…In this study, smaller-diameter Si NWs were synthesized by a metal-assisted chemical etching (MCE) method. , Figure a illustrates the stepwise fabrication process of Si NWs. To precisely control the diameter of the Si NWs, polystyrene (PS) spheres with uniform diameter were packed on the substrate surface, as shown by the SEM image (Figure S1a).…”

Section: Resultsmentioning

confidence: 99%

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Liu

Wang

Lin

et al. 2022

ACS Appl. Mater. Interfaces

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Ultraviolet photodetectors (UVPDs) have played an important role both in civil and military applications. While various studies have shown that traditional UVPDs based on wide-band-gap semiconductors (WBSs) have excellent device performances, it is, however, undeniable that the practical application of WBS-based UVPDs is largely limited by the relatively high fabrication cost. In this work, we propose a new silicon nanowire (Si NW) UVPD that is very sensitive to UVB light illumination. The Si NWs with a diameter of about 36 nm are fabricated by a metal-assisted chemical etching method. Performance analysis revealed that the Si NW device was only sensitive to UVB light and almost blind to illumination in the visible and near-infrared regions. Such abnormal spectral selectivity was associated with the leakage mode resonances (LMRs) of the small diameter, according to our theoretical simulation. Under 300 nm illumination, the responsivity, external quantum efficiency, and specific detectivity were estimated to be 10.2 AW–1, 4.22 × 103%, and 2.14 × 1010 Jones, respectively, which were comparable to or even higher than those of some WBS-based UVPDs. These results illustrate that the small dimension Si NWs are potential building blocks for low-cost and high-performance UVPDs in the future.

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“…Single Cu x O NW-based devices were realized by means of a combination of laser lithography, metal evaporation, and electron beam lithography (EBL), following the procedure adopted in previous works [39][40][41]. For this purpose, a commercial silicon substrate with 1 µm of thermal oxide was used to electrically characterize the NWs.…”

Section: Single-nw-based Device Fabricationmentioning

confidence: 99%

“…A micrometric mask of Ti/Au (5 nm, 200 nm) was then designed through Heidelberg µpg101 (Heidelberg Instruments Mikrotechnik GmbH, Heidelberg, Germany), a laser lithography system, and RF sputtering in Ar plasma (around 5 × 10 −3 mbar). The Cu x O NWs were transferred from the original substrate to the central part of the pre-patterned substrate, with the help of a scratching tool, near the Ti/Au tracks [41]. The NWs were randomly spread on the new substrate; therefore, their exact position was determined through FESEM.…”

Section: Single-nw-based Device Fabricationmentioning

confidence: 99%

Electrical and Thermal Conductivities of Single CuxO Nanowires

De Carlo,

Baudino,

Klapetek

et al. 2023

Nanomaterials

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Copper oxide nanowires (NWs) are promising elements for the realization of a wide range of devices for low-power electronics, gas sensors, and energy storage applications, due to their high aspect ratio, low environmental impact, and cost-effective manufacturing. Here, we report on the electrical and thermal properties of copper oxide NWs synthetized through thermal growth directly on copper foil. Structural characterization revealed that the growth process resulted in the formation of vertically aligned NWs on the Cu growth substrate, while the investigation of chemical composition revealed that the NWs were composed of CuO rather than Cu2O. The electrical characterization of single-NW-based devices, in which single NWs were contacted by Cu electrodes, revealed that the NWs were characterized by a conductivity of 7.6 × 10−2 S∙cm−1. The effect of the metal–insulator interface at the NW–electrode contact was analyzed by comparing characterizations in two-terminal and four-terminal configurations. The effective thermal conductivity of single CuO NWs placed on a substrate was measured using Scanning Thermal Microscopy (SThM), providing a value of 2.6 W∙m−1∙K−1, and using a simple Finite Difference model, an estimate for the thermal conductivity of the nanowire itself was obtained as 3.1 W∙m−1∙K−1. By shedding new light on the electrical and thermal properties of single CuO NWs, these results can be exploited for the rational design of a wide range of optoelectronic devices based on NWs.

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Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

Cited by 7 publications

References 26 publications

Direct growth of germanium nanowires on glass

Direct growth of germanium nanowires on glass

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Electrical and Thermal Conductivities of Single CuxO Nanowires

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