Electrical leakage at low-K polyimide/TEOS interface

Loke, Alvin L. S.; Wetzel, J. T.; Stankus, John J.; Angyal, M.; Mowry, B.; Wong, S.S.

doi:10.1109/55.678535

Cited by 16 publications

(4 citation statements)

References 7 publications

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“…X-ray photoelectron spectroscopy ͑XPS͒ analysis confirms the modification of the MSQ surface. 18,19 Additionally, NH 3 -plasma treatment can block copper penetration in post-CMP MSQ. Compared to Fig.…”

Section: Resultsmentioning

confidence: 99%

Highly reliable chemical–mechanical polishing process for organic low-k methylsilsesquioxane

Liu

Chang

Huang

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this work, chemical-mechanical polishing ͑CMP͒ of the organic polymer, methylsilsesquioxane ͑MSQ͒, has been investigated. For conventional silicate-based slurry, the CMP removal rate of MSQ is low and many scratches are formed at the surface. Moreover, the dielectric properties of a post-CMP MSQ film are degraded in comparison to the as-cured MSQ. We have proposed a reliable process for the CMP of MSQ which includes a slurry of additive and a post-CMP NH 3 plasma treatment. Experimental results show that the modified slurry provides a high polishing rate and uniform surface topography. In addition, the NH 3 plasma process can form a thin nitrogen-containing layer on the post-CMP MSQ surface, which enhances the resistance to moisture absorption and copper diffusion.

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Section: Resultsmentioning

confidence: 99%

Highly reliable chemical–mechanical polishing process for organic low-k methylsilsesquioxane

Liu

Chang

Huang

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Too high a testing temperature cannot be used [265,266], unless one is testing to directly assess the impact of such free Cu. Moisture ingress in LK/ULK dielectrics is known to have a deleterious effect on low-k leakage [273][274][275], dielectric breakdown strength, and field acceleration [276][277][278][279][280][281][282] and may be made worse when interfaces are present that lie along the electric field lines, as is the case for IMD capacitors [234]. The low activation energy of oxide breakdown also justifies the notion stated above about testing at a moderately high temperature for intrinsic (or integrated intrinsic) reliability assessment.…”

Section: Reliability Testing Of Low-k Dielectricsmentioning

confidence: 89%

Electrical Breakdown in Advanced Interconnect Dielectrics

Ogawa

Aubel

2012

Advanced Interconnects for ULSI Technology

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“…This speculation is already supported by [32] where RIE Al(Cu) integrated with Parylene-F showed an order of magnitude higher intralevel leakage current when the interconnects were in direct contact with the polymer than when the interconnects were isolated from the polymer by oxide liner encapsulation. Another study of FPI-passivated Damascene Al(Cu) showed that additional leakage occurred along the FPI/TEOS interface [33].…”

Section: Interface-related Instabilitiesmentioning

confidence: 99%

Electrical Reliability of Cu and Low-K Dielectric Integration

et al. 1998

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The recent demonstrations of manufacturable multilevel Cu metallization have heightened interest to integrate Cu and low-K dielectrics for future integrated circuits. For reliable integration of both materials, Cu may need to be encapsulated by barrier materials since Cu ions (Cu + ) might drift through low-K dielectrics to degrade interconnect and device integrity. This paper addresses the use of electrical testing techniques to evaluate the Cu + drift behavior of low-K polymer dielectrics. Specifically, bias-temperature stress and capacitance-voltage measurements are employed as their high sensitivities are well-suited for examining charge instabilities in dielectrics. Charge instabilities other than Cu + drift also exist. For example, when low-K polymers come into direct contact with either a metal or Si, interface-related instabilities attributed to electron/hole injection are observed. To overcome these issues, a planar Cu/oxide/polymer/oxide/Si capacitor test structure is developed for Cu + drift evaluation. Our study shows that Cu + ions drift readily into poly(arylene ether) and fluorinated polyimide, but much more slowly into benzocyclobutene. A thin nitride cap layer can prevent the penetration.

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Electrical leakage at low-K polyimide/TEOS interface

Cited by 16 publications

References 7 publications

Highly reliable chemical–mechanical polishing process for organic low-k methylsilsesquioxane

Highly reliable chemical–mechanical polishing process for organic low-k methylsilsesquioxane

Electrical Breakdown in Advanced Interconnect Dielectrics

Electrical Reliability of Cu and Low-K Dielectric Integration

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