Electrical measurement of submicrometer contact holes

Lin, Burn J.; Underhill, J. A.; Sundling, D.L.; Peck, B.

doi:10.1109/66.29673

Cited by 3 publications

(3 citation statements)

References 5 publications

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“…Arrays whose asymmetry is an indicator of process variation [5], as well as those consisting of Murray-dagger-like elements [6] have been applied to stepper setup. Electrical measurement of arrays has also been used to monitor contact dimensions [7]. range of 0.5 -I .Ottm.…”

Section: Optical Critical Dimension (Ocd) Metrologymentioning

confidence: 99%

Seeing the forest for the trees: a new approach to CD control

Ausschnitt¹,

Lagus²

1998

SPIE Proceedings

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Critical dimension (CD) control in advanced semiconductor manufacturing has driven the in-line implementation of complex. high-resolution mctrologv systems to monitor minimum product dinicusions. Yet the high-resolution approach is inconsistent with in-line CD control objectives: resolution does not translate to precision or accuracy, weak response to process parameters inhibits feedback control, sparse sampling precludes partitioning contributors to CD variation, and extendability to future product generations is in question.We shos that superior, affordable and extendabic CD control is achieved by optical critical dimension (OCD) measurement of pattern arrays ('forests") whose individual features ("trees") need not be resolved by the metrolog tool. The array dimension, averaged over multiple features, responds to CD change about a target value calibrated to the desired device dimension. Response sensitivity greater than that of the minimum dimension can improve the signal-to-noise for feedback control as well as the precision-to-tolerance for product dispositioning. Relatively low-cost and high-speed inetrolog enables increased product sampling. We describe our application of OCD metrology to 0.25 tim CMOS products.

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Section: Optical Critical Dimension (Ocd) Metrologymentioning

confidence: 99%

Seeing the forest for the trees: a new approach to CD control

Ausschnitt¹,

Lagus²

1998

SPIE Proceedings

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“…The majority of other precise measurement systems have resolution problems. Therefore, those systems cannot be taken into factories because measurements may be influenced by environmental conditions, such as wind or vibration [2].…”

Section: Introductionmentioning

confidence: 99%

New Non-Contact Measurement of Small inside-Diameter Using Tandem Low-Coherence Interferometer and Optical Fiber Devices

Matsui

Matsumoto

Takahashi

et al. 2012

KEM

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Recently, manufacturing techniques of small-scale products have been improved. As a result, precise measurement is required of small inside diameters, for example, of engine nozzles. However, an in situ measurement and measurement system for small-sized products has yet to be fully established. In this research, a contactless technique to measure small inside diameters is proposed. This new method uses tandem low-coherence interferometry and an optical fiber cut at an angle of 45°. This optical fiber is up to 30 μm in diameter and is used as a probe. Our objective is to measure holes as small as 50-μm inside diameter with an accuracy of 100 nm. In the present paper, we report on the measurement principle, calculate the measurement uncertainty and show that experimental measurements can be obtained of small-size holes up to 300-μm inside diameter with an accuracy of 100 nm.

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“…All linewidths are calculated using the expression: L W=p5 ;77f (4) A constant cugent I flows from pad 6 to 16 and voltages V corresponding to pad pairs are measured by the LithoMap system. When contact holes are present in the bar, the volume of the bar is reduced by the volume of the contact holes and the resistance of the bar is changed.…”

mentioning

confidence: 99%

0.50 μm contact measurement and characterization

Lindsay

Orvek

Mumaw³

1991

SPIE Proceedings

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A comparison of SEM measurements versus electrical measurements of contact holes is presented. Inline SEM measurements on a Hitachi S6000 and measurements of micrograps from an off-line JEOL 845 SEM are compared to electrical measurements on a Prometrix LithoMap system for metrology of contacts down to 0.25j.trn size. The electrical measurements of contacts through focus/exposure vanations on the stepper are shown to correlate very well with SEM measurements. Electrical measurement of contact holes in conductive films is shown to reflect actual process latitudes on oxide wafers, allowing electrical metrology to be used in optimizing lithography processes. INTRODUCTIONMeasurement of contact holes following the lithography and etch process steps presents one of the most difficult challenges to semiconductor metrology, particularly when contact sizes approach 0.5km. Non-destructive rn-line SEM measurements suffer from resist changing effects and lack of contrast. Wei Lee et. al. investigated contacts down to 0.8pm with the use of conductive-coated SEM metrology versus SEM metrology of thin relief images of the contacts etched into polysiicon. The conductive-coated SEM measurements provided good details of sizing and resist slope, but the technique requires off-line analysis. The technique of shallow-etching the contacts into poly correlated well with the conductive-coated results, and avoided the low-contrast and changing effects of directly measuring the resist. Another techniqie that minimizes the low-contrast and changing effects on resist images is the photocleave technique' , where a second-pass exposure of a straight edge followed by another develop step is used to remove the front half of the resist contact. Uncoated samples can then be imaged on an rn-line SEM with higher contrast and less changing. However all of the SEM-based techniques are time-consuming when vast amounts of data are required, as in the initial process development stage. B .J. Lin et at investigated the ability to employ electrical measurements to measure contacts down to 0.6im. Lm et al used measurements from SEM micrographs to calibrate the electrical measurements of dense contact arrays. The benefits of electrical measurements are improved precision over SEM-based techniques and the ability to accumulate a vast amount of data in a short time.In this paper we present the results of our comarison of in-line SEM measurements (Hitachi 56000) to electrical measurements (Prometrix LithoMap (EM1)) and to SEM micrographs (JEOL 845) for metrology of contacts down to 0.25.i.m size. We have extended the initial work of Lm et al to investigate the effects of contact separation and relative density to the electrical measurement results, and to examine the applicability of this technique to smaller contact sizes. The three different metrology tech-104 / SPIE Vol. 1464 Integrated Circuit Metrology, Inspection, and Process Control V (1991) O-8194-0563-9/91/$4.OO Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/20/2016 Terms of Use: ht...

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Electrical measurement of submicrometer contact holes

Cited by 3 publications

References 5 publications

Seeing the forest for the trees: a new approach to CD control

Seeing the forest for the trees: a new approach to CD control

New Non-Contact Measurement of Small inside-Diameter Using Tandem Low-Coherence Interferometer and Optical Fiber Devices

0.50 μm contact measurement and characterization

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