Divinyl tetramethyl disiloxane (DVS), hexamethyl disilazane (HMDS), and methyl trimethoxysilane (MTS) polymer films were deposited on p‐type silicon substrates using plasma‐enhanced chemical vapor deposition (PECVD) processing. The deposition process was implemented in a parallel‐plate, capacitively coupled plasma deposition system. Excellent film thickness and refractive index uniformity false(normalstd dev=2–3%false) were obtained. The deposition kinetics were studied as a function of process parameters such as pressure, power, density, and substrate temperature. The polymer film's physical properties were characterized by Fourier transformed infrared (FTIR), electron spectroscopy for chemical analysis (ESCA), Auger spectroscopy, electron spin resonance (ESR), and plasma etching. These polymer films were used as an intermediate oxygen etch resistance layer in trilevel resist lithography to produce submicron image patterns (≃ 0.7 μm lines and spaces) using step and repeat photolithography.

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