Silicon Oxynitride As A Barrier Layer In A 3-Layer Photoresist System

Underhill, J. A.; Nguyen, Van Son; Kerbaugh, Michael; Sundling, D.L.

doi:10.1117/12.947819

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1986

1999

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Cited by 6 publications

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“…made concerning the composition of any insulating layer. Second, under certain conditions, the Raman signal near a metal surface (5-504) is enhanced by as much as 10 ~ (3,4). The surface enhanced Raman effect is particularly pronounced for clean, rough silver surfaces.…”

Section: Discussionmentioning

confidence: 99%

Variation of Hydrogen Bonding, Depth Profiles, and Spin Density in Plasma‐Deposited Silicon Nitride and Oxynitride Film with Deposition Mechanism

Nguyen

Lanford

Rieger

1986

J. Electrochem. Soc.

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The initial transient phenomenon in plasma processing, an intrinsic and unstable phenomenon of the glow discharge, is found to be the probable cause of the hydrogen‐poor and silicon‐rich structure and the silicon nitride(or oxynitride)‐silicon substrate interfaces of all plasma‐deposited films. A simple and qualitative model was developed to explain the variation of the interface composition of the film with this transient phenomenon. Fourier transform infrared and electron spin resonance measurements suggest the existence of a “stable” amorphous silicon oxynitride false(RI≃1.75false) composition in films prepared by plasma‐enhanced chemical vapor deposition processing.

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Section: Discussionmentioning

confidence: 99%