Electrical measurements on silicon layers implanted with 50 keV phosphorus ions

Andersson, Åke E.; Swenson, G.

doi:10.1080/00337577208234698

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1975

1979

Publication Types

Select...

Article3

Book2

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 6 publications

References 17 publications

(5 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

Neutron and X-ray diffraction investigations of silicon implanted by phosphorus ions

Eichhorn

1975

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

A silicon crystal slice of 0.2 mm thickness is implanted with 28 ke V phosphorus ions at a dose of 2 × 1015 cm−2. Both thermal neutron and X‐ray double crystal diffractometry and X‐ray topography demonstrate the existence of a distorted crystal region near the amorphous layer. The mean atomic distance is increased by 3.1 × 10−5 and 1.5 × 10−5 perpendicular and parallel to the implanted layer, respectively. By isochronal annealing in the temperature range of 400 to 1000 °C radiation defects recover, the implanted layer is recrystallized, and at higher temperatures crystal lattice defects are generated.

show abstract

Neutron and X-ray diffraction investigations of silicon implanted by phosphorus ions

Eichhorn

1975

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

show abstract

The annealing characteristics of phosphorus-implanted silicon investigated at low temperatures

Wagner

El‐Sadek

Mechelke

1978

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300°C, respectively. The ion doses used are 8 × 1013 and 8 × 1014 cm−2, respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus‐implanted silicon and the influence of the implantation parameters.

show abstract

Sheet Resistivity and Hall Effect Measurements of Aluminium Implanted Silicon and Silicon Films on Sapphire

Holmén

Peterström

1977

Ion Implantation in Semiconductors 1976

View full text Add to dashboard Cite

Electrical measurements on silicon layers implanted with 50 keV phosphorus ions

Cited by 6 publications

References 17 publications

Neutron and X-ray diffraction investigations of silicon implanted by phosphorus ions

Neutron and X-ray diffraction investigations of silicon implanted by phosphorus ions

The annealing characteristics of phosphorus-implanted silicon investigated at low temperatures

Sheet Resistivity and Hall Effect Measurements of Aluminium Implanted Silicon and Silicon Films on Sapphire

Contact Info

Product

Resources

About