Electrical Properties and Conduction Mechanism of Au/C20H12/n-Si Structure at High Temperatures Utilizing Impedance Measurements

Bengi, S.

doi:10.1007/s11664-023-10287-z

Cited by 5 publications

(2 citation statements)

References 36 publications

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“…[6][7][8]. The use of such organic materials has increased due to their low cost, reduced leakage current, passivation of unsaturated bonds on the semiconductor surface, light weight, flexibility, easy production, synthesis of compounds with diverse properties for different uses and wide applicability [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

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The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

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Using the I-V characteristics both in the dark and under varied illumination-intensities (50–250 mW.cm−2) by 50 mW.cm−2 steps in the wide range bias-voltage (±5 V), specific fundamental electrical and photo effects parameters of the Au/C20H12/n-Si SBD were examined. Due to the creation of electron–hole pairs and their drift in opposite directions under the influence of an electric field, the value of photocurrent in the reverse bias (Iph) increases when illumination density is increased. The barrier height (ΦB0) tended to decrease due to the increase in photocurrent, while the diode’s ideality factor (n) increased with increasing illumination intensity. Also, the Schottky structure’s open-circuit voltage (Voc), short circuit current (Isc), filling factor (FF), and efficiency (η) were determined to be 0.358 V, 95.5 μA, 33%, and 0.028% under 50 mW.cm−2, respectively. The Rs and Rsh values found using Ohm’s law are a vital function of illumination and voltage which decrease with increasing illumination intensity. Additionally, using the forward bias I-V data and accounting for the bias dependent of the effective barrier height (Φe) and ideality factor n(V) for different illumination intensities, the energy density distribution profile of surface states (Nss) was obtained. According to these results, the organic interlayer consisting of C20H12 is light-sensitive and suitable for optoelectronic devices such as photodetectors and photodiodes.

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Section: Introductionmentioning

confidence: 99%

“…[20,21]. At the same time, in our previous studies, both the electrical and dielectric properties of Al/perylene/n-Si (MPS) structures were investigated in a wide temperature range [13,16]. However, the illumination effects of the Al/perylene/n-Si (MPS) structure over a wide voltage range has not been studied.…”

Section: Introductionmentioning

confidence: 99%

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

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On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)

Çetinkaya

Vahid

Başman

et al. 2023

J Mater Sci: Mater Electron

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The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

Yükseltürk

Bengi

2023

J Mater Sci: Mater Electron

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Electrical Properties and Conduction Mechanism of Au/C20H12/n-Si Structure at High Temperatures Utilizing Impedance Measurements

Cited by 5 publications

References 36 publications

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)

The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

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Electrical Properties and Conduction Mechanism of Au/C20H12/n-Si Structure at High Temperatures Utilizing Impedance Measurements

Cited by 5 publications

References 36 publications

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)

The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

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Product

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The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)