Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu

Pan, H.L.; Ye, Bin; Yang, Tao; Xu, Ying; Zhang, B. Y.; Liu, W. W.; Shen, Dezhen

doi:10.1063/1.3496038

Cited by 48 publications

(22 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This effect in Zn(O,S) has been utilized for activating p-type acceptors that are energetically too deep in pure binary ZnO. 7 In this work, we complement the early study by analyzing both the cubic zinc-blende (zb) like phase as well as the hexagonal wurtzite (wz) like phase of the alloy composition, now both for Zn(O,S) and Zn(O,Se). The dielectric function of the Zn(O,Y) alloys are analyzed theoretically by a partially self-consistent Green's function approach.…”

Section: Introductionmentioning

confidence: 99%

Understanding the optical properties of ZnO1−xSx and ZnO1−xSex alloys

Baldissera

Persson

2016

Journal of Applied Physics

View full text Add to dashboard Cite

ZnO 1Àx Y x with chalcogen element Y exhibits intriguing optoelectronic properties as the alloying strongly impacts the band-gap energy E g (x). In this work, we analyze and compare the electronic structures and the dielectric responses of Zn(O,S) and Zn(O,Se) alloys by means of the density functional theory and the partially self-consistent GW approach. We model the crystalline stability from the total energies, and the results indicate that Zn(O,S) is more stable as alloy than Zn(O,Se). We demonstrate also that ion relaxation strongly affects total energies, and that the band-gap bowing depends primarily on local relaxation of the bonds. Moreover, we show that the composition dependent band-gap needs to be analyzed by the band anti-crossing model for small alloying concentration, while the alloying band-bowing model is accurate for strong alloying. We find that the Se-based alloys have a stronger change in the band-gap energy (for instance, DE g (0.50) ¼ E g (ZnO)-E g (x ¼ 0.50) % 2.2 eV) compared with that of the S-based alloy (DE g (0.50) ¼ 1.2 eV), mainly due to a stronger relaxation of the Zn-anion bonds that affects the electronic structure near the band edges. The optical properties of the alloys are discussed in terms of the complex dielectric function e(x) ¼ e 1 (x) þ ie 2 (x) and the absorption coefficient a(x). While the large band-gap bowing directly impacts the low-energy absorption spectra, the high-frequency dielectric constant e 1 is correlated to the intensity of the dielectric response at energies above 4 eV. Therefore, the dielectric constant is only weakly affected by the non-linear band-gap variation. Despite strong structural relaxation, the high absorption coefficients of the alloys demonstrate that the alloys have wellbehaved optoelectronic properties. V

show abstract

Section: Introductionmentioning

confidence: 99%

Understanding the optical properties of ZnO1−xSx and ZnO1−xSex alloys

Baldissera

Persson

2016

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Cu ions are well known as electron traps in ZnO films and they can increase the resistivity of ZnO from semiconducting to insulating-like properties [10][11][12]. More importantly, the Cu dopants was found to be efficient for realizing stable p-type ZnO films [13]. These notable characteristics of ZnO:Cu have attracted our interest to explore its potential use in ReRAM.…”

Section: Introductionmentioning

confidence: 99%

Effect of incorporating copper on resistive switching properties of ZnO films

Jia

Dong

Zhang

2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…The addition of S has been shown to cause VB offset bowing in ZnO 1−x S x alloy which can be exploited to enhance the p-type doping efficiency and stability of Cu-doped ZnO films. The ZnO films alloyed with Cu and S showed very stable p-type conductivity with a hole concentration of 4.31-5.78 × 10 19 cm −3 , a resistivity of 0.29-0.34 Ω cm, and a mobility of 0.32-0.49 cm 2 /V s. The p-type conductivity was attributed to the substitution of Cu 1+ for the Zn site, and the ionization energy of the Cu 1+ was measured to be 53 meV which is significantly lower than the value reported for Cu-doped ZnO films [111]. Guided by the theoretical predictions, Ahn et al [112] have successfully achieved the Cu-doped p-type ZnO.…”

Section: Group Ib P-type Dopingmentioning

confidence: 62%