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A p-type B-N codoped ZnO film was grown on quartz by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 2.3 cm , Hall mobility of 11 cm 2 V −1 s −1 and carrier concentration of 1.2 × 10 17 cm −3 , better than the electrical properties of the N-doped p-type ZnO. The ZnO homojunction fabricated by deposition of an undoped n-type ZnO layer on the B-N codoped p-type ZnO layer showed clear p-n diode characteristics. Differing from the N-doped ZnO, the low-temperature photoluminescence spectrum of the codoped ZnO film consists of two dominant peaks located at 3.096 eV and 3.251 eV, respectively. The former is due to radiative electron transition from the conduction band to the Zn vacancy acceptor level, and the latter due to recombination of the donor-acceptor pair. The mechanism of p-type conductivity was discussed in this work.

We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−x Cu x O1−y S y ) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn1−x Cu x O1−y S y system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn1−x Cu x O1−y S y alloy with high hole concentration is promising to find applications in spintronic devices.