Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal–insulator–semiconductor (MIS) diode at high temperature range

Reddy, V. Rajagopal

doi:10.1007/s00339-016-0047-2

Appl. Phys. A

2016

DOI: 10.1007/s00339-016-0047-2

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Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal–insulator–semiconductor (MIS) diode at high temperature range

V. Rajagopal Reddy

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Cited by 6 publications

References 30 publications

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Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal–insulator–semiconductor (MIS) diode at high temperature range

Cited by 6 publications

References 30 publications

Analysis of electronic parameters and frequency-dependent properties of Au/NiO/n-GaN heterojunctions

Analysis of electronic parameters and frequency-dependent properties of Au/NiO/n-GaN heterojunctions

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

Modified Interface Properties of Au/n-type GaN Schottky Junction with a High-k Ba0.6Sr0.4TiO3 Insulating Layer

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