Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation

Fukuda, Yukio; Kato, Koji; Toyota, Hiroshi; Ono, Takahito; Nagasato, Yoshitaka; Ueno, Tomo

doi:10.1143/jjap.45.7351

Cited by 12 publications

(12 citation statements)

References 7 publications

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“…Engineering a stable interface layer between the high-k film and Ge is vital to achieving dimensionally-scaled, high speed, field effect transistors. Previous studies on high-k/Ge gate stacks with interfacial layers such as germanium nitride and oxynitride have been reported 2,3,4,5 and high-k film should be substantially thinner than 2 nm in order to allow scaling of the gate capacitance density. Moreover, interface layers must exhibit resistance to oxidation during postdeposition thermal processes.…”

Section: Introductionmentioning

confidence: 99%

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

Oshima¹,

Sun

Kuzum

et al. 2008

J. Electrochem. Soc.

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Correlations among interface properties and chemical bonding characteristics in HfnormalO2∕GenormalOxnormalNy∕Ge metal–insulator–semiconductor stacks were investigated using in situ remote nitridation of the Ge(100) surface prior to HfnormalO2 atomic layer deposition. Ultrathin (∼1.1nm) , thermally stable, and aqueous etch-resistant GenormalOxnormalNy interface layers that exhibited Ge core-level photoelectron spectra similar to stoichiometric normalGe3normalN4 were synthesized. To evaluate GenormalOxnormalNy∕Ge interface defects, the density of interface states (Dit) was extracted by the conductance method across the bandgap. Forming gas annealed (FGA) samples exhibited substantially lower Dit (∼1×1012cm−2eV−1) than did high-vacuum-annealed and inert gas anneal samples (∼1×1013cm−2eV−1) . Germanium core-level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfnormalO2 film surface and apparent modification of chemical bonding at the GenormalOxnormalNy∕Ge interface which is related to the reduced Dit .

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Section: Introductionmentioning

confidence: 99%

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

Oshima¹,

Sun

Kuzum

et al. 2008

J. Electrochem. Soc.

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“…Furthermore, Ge is compatible to standard Si MOS technologies mainly due to its lower melting temperature compared to Si. [1][2][3] Therefore, GeO 2 is principally well suited as MOSFET gate oxide material.…”

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confidence: 99%

Plasma-oxidation of Ge(100) surfaces using dielectric barrier discharge investigated by metastable induced electron spectroscopy, ultraviolet photoelectron spectroscopy, and x-ray photoelectron spectroscopy

Wegewitz

Dahle

Höfft

et al. 2011

Journal of Applied Physics

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The radical oxidation of Ge(100) applying a dielectric barrier discharge plasma was investigated using metastable induced electron spectroscopy, ultraviolet photoelectron spectroscopy, and x-ray photoelectron spectroscopy. The plasma treatments were performed in a pure oxygen atmosphere as well as under environmental conditions at room temperature. In both atmospheres GeO2 layers up to thicknesses of several nm were formed on the Ge(100) surface.

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“…On the other hand, because the ECR plasma method enables the generation of high-density plasma at low pressure, it is very useful for low-temperature fabrication processes of high-k films, such as sputtering deposition, oxidation and nitridation (6)(7)(8). Therefore, in these oxidation methods, because there is no high thermal energy for the generation of the oxygen molecule, it could be possible to oxidize at low temperatures.…”

Section: Methodsmentioning

confidence: 99%

The Approach for Direct Stacking of High-k Dielectrics on Si

Nagasato¹,

Iwazaki²,

Hasumi³

et al. 2007

ECS Trans.

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We present the approach for direct stacking of high-k dielectrics on Si. For the reduction of equivalent oxide thickness (EOT), the fabrication method of high-k/Si structure in which interfacial SiO 2 layer scarcely formed was proposed. In this method, high-k films were fabricated by ultrahigh vacuum sputtering of metal thin films followed by post-oxidation. For the oxidation of metal films such as Hf, Zr or Al, using plasma oxidation methods at the lowtemperature improves the electrical properties of high-k/Si. HfO 2 /Si structures fabricated by plasma oxidation in the Kr/O 2 mixed ambient had the calculated k-value of 25.1 with the thickness of interfacial layer of 0.2nm. Furthermore, because the mutual diffusion at the interface was suppressed, interface quality was improved by low-temperature oxidation. In this study, using a suitable oxidation method and condition for each metal leads to the fabrication of an ideal stacking structure of high-k dielectrics on Si.

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Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation

Cited by 12 publications

References 7 publications

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

Plasma-oxidation of Ge(100) surfaces using dielectric barrier discharge investigated by metastable induced electron spectroscopy, ultraviolet photoelectron spectroscopy, and x-ray photoelectron spectroscopy

The Approach for Direct Stacking of High-k Dielectrics on Si

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