Electrical properties of Hg1−x MnxTe-based photodiodes

Kosyachenko, L. A.; Раренко, И. М.; Bodnaruk, O. A.; Sun, Weiguo

doi:10.1134/1.1187910

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“…The intrinsic carrier concentration and energy gap of the as-grown film were estimated according to [4]: The intrinsic carrier concentration and energy gap of the as-grown film were estimated according to [4]: …”

Section: Experimenal Detailsmentioning

confidence: 99%

Smart Heterostructures Based on Solid Solution ZnCdHgTe

et al. 2003

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Current -voltage (IVC) and capacitance -voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films Zn x Cd y Hg 1-x-y Te were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 µm. Electric characteristics of the as-grown structures were examined under T = 77 -290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50 -0.65 µm..

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Section: Experimenal Detailsmentioning

confidence: 99%