Electrical properties of high density arrays of silicon nanowire field effect transistors

Abstract

Articles you may be interested inPalladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection Appl. Phys. Lett. 104, 013508 (2014) Proximity effect corrected e-beam lithography of hydrogen silsesquioxane on silicon on insulator was used to fabricate multi-channel silicon nanowire field-effect transistors (SiNW FETs). Arrays of 15-channels with a line width of 18 nm and pitch as small as 50 nm, the smallest reported for electrically functional devices, were fabricated. These high density arrays were back-gated by the substrate and allowed for investigation of the effects of scaling on the electrical performance of this multi-channel SiNW FET. It was revealed that the drain current and the transconductance (g m ) are both reduced with decreasing pitch size. The drain induced barrier lowering and the threshold voltage (V th ) are also decreased, whereas the subthreshold swing (S) is increased. The results are in agreement with our simulations of the electric potential profile of the devices. The study contains valuable information on SiNW FET integration and scaling for future devices. V C 2013 AIP Publishing LLC.[http://dx

CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

“…The pitch size plays a role in the sensing performance. For example, a small pitch size array was shown to have reduced sensing performance due to the fringing capacitance and low electrostatic field resulting from the applied back gate voltage [ 128 ]. Although the total sensing area of arrays are larger than that of NWs, the device overall sensitivity is still complex and depends on whether the detection is reaction limited or near the end of detection equilibrium.…”

Effects of vacancy defects and axial strain on thermal conductivity of silicon nanowires: A reverse nonequilibrium molecular dynamics simulation

“…Among the silicon nanostructures, silicon nanowires (SiNWs) are highly considered due to their thermoelectric, optical, electrical and thermal properties and a great deal of researches have been focused on fabrication, investigation and applications of these nanostructures. It is shown that silicon nanowire field effect transistors (SiNWFETs) [1][2][3] can be a reliable candid for biosensors which they are real-time, high selective and high sensitive [4][5][6]. They are also a nice choice for advanced energy storage and conversion devices [7] such as lithium-ion rechargeable batteries [8][9][10], photovoltaic devices [11][12][13], and thermoelectric devices [14][15][16].…”

Multiple contacts investigation of single silicon nanowires with the active voltage contrast scanning electron microscopy technique

“…Negative resist-hydrogen silsesquioxane (HSQ) has been used as a mask against dry etching. HSQ converts into silicon dioxide during electron beam exposure, which is then thermally cured to increase the stability against dry etching [18][19][20][21][22][23] and act as an insulating layer to prevent the Hall contact electrode from shorting [14]. The angled deposition technique, where the NWs are used as a shadow mask, is utilized for Hall electrode formation.…”