Electrical properties of ion beam sputtered and ion assisted SiO2, SiOXNY, and SiNX films on silicon

Abstract

Articles you may be interested inPhysical and electrical properties of low temperature ( C ) SiO 2 films deposited by electron cyclotron resonance plasmas J. Vac. Sci. Technol. A 21, 728 (2003); 10.1116/1.1562179 Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates J.Electrical properties of silicon nitride films prepared by electron cyclotron resonance assisted sputter deposition To develop methods for the formation of metal-insulator-semiconductor ͑MIS͒ devices at low temperature, thin SiO 2 , SiO X N Y , and SiN X films were reactively sputtered onto nonheated silicon substrates using different sputtering and ion assist parameters. SiO 2 was prepared by bombarding Si with Ar ϩ ions in Ar/O 2 ambient whereas SiO X N Y and SiN X films were prepared by bombarding Si 3 N 4 with N 2 ϩ ions in N 2 /O 2 and Ar/N 2 ambients, respectively. In addition, 300 eV N 2 ϩ ion assistance was used during preparation of SiN X films to enhance film nitriding. The 100-300 eV Ar ϩ ion assistance was also used during preparation of SiO 2 to investigate the electrical damage effects caused by energetic ion bombardment during sputtering of the insulator film. The bulk and interfacial electrical properties of these films, which were assessed from current-voltage and high-frequency capacitance-voltage (C -V) measurements on MIS structures, indicate that the Si native oxide and type of anneal play a key role in determining the final film-interface quality. SiO X N Y sputtered films exhibit poorer C -V electrical characteristics with increasing nitrogen content resulting from the creation of positive fixed charge in the film and fast interfacial states. This damage can be suppressed using a native oxide but this increases the instability of the interface. Ion assistance of SiO 2 films increased the level of electrical damage to the film in the bulk and in the vicinity of the interface. The majority of this damage manifests itself as fixed charge and trapping states in the film rather than fast interfacial states and leads to lower breakdown voltages and higher dielectric constants. Drift behavior of these films suggest that, with a native oxide in place, the former type of ion bombardment induced damage can be eliminated by a forming gas anneal although some deterioration of the electrical bulk properties remains.

The Effect of Interface States on Single-Walled Carbon Nanotube Transistors

“…24 Sputter deposition technologies usually result in some interfacial mixing. 36 These indicate that the modulated drain current arose from electric-field induced accumulation of electrons at the (6,5) SWCNT-SiN x interface. The localization states of carbon nanotubes could be generated by the defects of interface states, 37 similar to a wide conduction-bandtail state distribution in amorphous silicon thin film transistors.…”

Techniques for high quality SiO 2 films

“…The FTIR curves were measured with the SiO 2 film on top of double-sided polished Si substrates normalized to the ambient background. The absorption coefficient curves were then found through computer simulation using a combination of a characteristic transfer matrix 9 and second-order equations 10,11 , with close agreement when accounting for interference fringes 12 . The SiO 2 absorption curves presented in this work are similar to Ref.…”

Suspending highly doped silicon-on-insulator wires for applications in nanomechanics

“…For the electron-beam lithography a two-layer PMMA electron resist was chosen and an Al film of about 30 nm thickness was subsequently evaporated producing a thin, structured etch mask after liftoff (figure 1(a)). In order to separate the underlying silicon from the Al and prevent Al diffusion into the SOI film during the dry etching process, a 50 nm SiO 2 film was deposited before electron-beam lithography by sputtering [18]. Another photolithographic step after the electron-beam lithography is required to obtain a photoresist etch mask for the larger bond-pad regions.…”