Electrical properties of liquid Cd-Te alloys

Moussa, Ali Ben; Giordanengo, B.; Humbert, J.; Chaaba, H.; Bestandji, M; Gasser, J.G.

doi:10.1103/physrevb.62.16632

Cited by 7 publications

(15 citation statements)

References 18 publications

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“…For liquid Cd 0.5 Te 0.5 , S > 0 with a negative slope. Our results for undoped CdTe slightly differ from those presented in [9]. The main reason of such discrepancy can be supposed to be the essentially higher total pressure above the melts in our measurements and, probably, different heating rates.…”

Section: Resultscontrasting

confidence: 56%

“…Recently Ben Moussa et al in [9] had published thermopower data of liquid Cd x Te 1--x over the whole composition range up to 1473 K. It has been shown that S > 0 and dS/dT < 0 for Te-rich compositions while S < 0 and dS/dT > 0 for Cd-rich melts. For liquid Cd 0.5 Te 0.5 , S > 0 with a negative slope.…”

Section: Resultsmentioning

confidence: 99%

“…The main reason of such discrepancy can be supposed to be the essentially higher total pressure above the melts in our measurements and, probably, different heating rates. Nevertheless, the results of [9] can be used for an explanation of the data presented in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

“…Using the results of [3,9], our S(T) data can be treated as an illustration of certain CdTe melt structure rearrangement during heating. Above 1387 AE 1 K up to the temperature of minimum in the S(T) curve (i.e.…”

Section: Resultsmentioning

confidence: 99%

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CdTe-Ge Melt Structure Rearrangement Study

Shcherbak

Feychuk

Plevachuk

et al. 2002

phys. stat. sol. (b)

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Electrical conductivity s(T) and thermoelectric power S(T) for undoped CdTe and for CdTe doped by 2 mol% Ge, were measured at high Ar pressure up to 1825 and 1525 K, correspondingly. While the s(T) dependencies of both melts indicate their semiconducting behaviour with similar parameters, the S(T) curves revealed a tendency to metalization at 1400 AE 20 K for the pure CdTe melt. The Ge presence prevents the latter process though the critical point where the S(T) dependence changes its slope, demonstrating a structure change of the melt, is the same as for pure CdTe melt. The CdTe + Ge melt shear viscosity measurements upon moderate pressure up to 1400 K gave the possibility to obtain evidence of a finer structure rearrangement of the melt near 1376 and 1400 K.Introduction CdTe is considered as one of a few semiconductors that are not metallized when melted [1] but, similar to those melts, in a certain temperature range demonstrate a postmelting effect due to a gradual transformation of three-dimensional elementary structural units (clusters) to zero-dimensional (atoms, ions) ones [2]. Using ab initio molecular dynamics simulation of liquid CdTe, Godlevsky et al. have suggested in [3] that spatial bond transformation during CdTe cooling occurs via a stage of Te infinite branched chain formation, but the temperature range of this process is unknown. The simulation in [3] was based on an assumption [4] that at a temperature about 120 K higher than the melting point, the liquid phase becomes metallic though there was no experimental evidence for such a transformation. The necessity of a more detailed study of CdTe melt structure rearrangement on a heating arose also from the fact that one (at 1373 AE 1 K) or some (near 1379 AE 1, 1393 AE 1, 1413 AE 1 K) additional endothermic effects occur above the melting point (T m) at certain thermodynamic conditions but their nature is not understood entirely. For this purpose a study of the influence of impurities on the CdTe postmelting effect should be performed. In the present work Ge was chosen as such impurity taking into account its ability to metallize above T m . Besides, CdTe crystals doped by Ge from the melt are high resistive photorefractive material [5]. It is known that the crystal structure and physical properties are related to the melt structure before solidification [6] that, in turn, depends on the thermal history of the melt.As a CdTe + Ge melt structure study by direct diffraction methods is restricted by the high vapour pressure of components, we carried out the investigation of the

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Section: Resultscontrasting

confidence: 56%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

CdTe-Ge Melt Structure Rearrangement Study

Shcherbak

Feychuk

Plevachuk

et al. 2002

phys. stat. sol. (b)

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“…In the following paper [2] this approach was extended to deal with the binary alloys of the simple liquid metals. The results of that paper provide excellent agreement of the concentration dependence of the simple liquid metals [3][4][5] with the experiment and is extensively used to the present day [7][8][9][10].…”

Section: Introductionsupporting

confidence: 51%

The Electroconductivity of the Liquid Alloys of Transition Metals

Shvets¹,

Savenko²,

Datsko³

2004

Condens. Matter Phys.

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The concentration dependance of electroresistivity of the liquid binary alloys of transition metals Fe, Co and Ni is calculated. We considered the contribution to conductivity from the s-electrons, described within the model of nearly free electrons. The role of the partially occupied d-bands is reduced to resonance scattering of the s-electrons on d-states. The interaction of the s-and d-electrons is described by the hybridization potential of s-and d-states. The interaction with the ions, not including the partially occupied d-states, is described using the pseudopotential of the electronion interaction. The electroresistivity of the alloys is calculated in the second order of the perturbation theory in pseudopotential and hybridization potential. The concentration dependance of electroresistivity of the binary alloys approaches the linear regime as the resonance scattering of the s-electrons on d-states prevails over the scattering on the ions. The calculations exhibit good agreement with the experimental data.

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