Electrical properties of Ti/TiN films prepared by chemical vapor deposition and their applications in submicron structures as contact and barrier materials

Hu, Jiumei; Ameen, M.; Leusink, G. J.; Webb, David J.; Hillman, J. T.

doi:10.1016/s0040-6090(97)00477-x

Cited by 26 publications

(7 citation statements)

References 7 publications

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“…[27][28][29] The high value might be partly due to so-called 'current crowding' at the contacts, which means that only part of the TiN contact area is active in the transport of current from and to the CdS. This effect occurs because the diameter of the contact is much larger than the film thickness, and the current always chooses the path of the least resistance.…”

Section: The Tin/cds Contactmentioning

confidence: 99%

Titanium nitride: A new Ohmic contact material for n-type CdS

Didden¹,

Battjes²,

Machunze³

et al. 2011

Journal of Applied Physics

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In devices based on CdS, indium is often used to make Ohmic contacts. Since indium is scarce and expensive, suitable replacement materials need to be found. In this work, we show that sputtered titanium nitride forms an Ohmic contact with n-type CdS. The CdS films, deposited with chemical bath deposition, have a hexagonal crystal structure and are polycrystalline, mostly with a (002) texture. The thickness of the films is $600 nm, and the donor density is 1.9 Â 10 16 cm À3. The donor density increases to 1.5 Â 10 17 cm À3 upon annealing. The contact resistivity of sputtered TiN on CdS is found to be 4.7 6 0.6 X cm 2 . This value is sufficiently small to avoid large resistive losses in most CdS device applications. To demonstrate the use of TiN in a CdS device, a Au/CdS/ TiN Schottky diode was constructed. The diode has a potential barrier of 0.69 V and an ideality factor of 2.2.

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Section: The Tin/cds Contactmentioning

confidence: 99%

Titanium nitride: A new Ohmic contact material for n-type CdS

Didden¹,

Battjes²,

Machunze³

et al. 2011

Journal of Applied Physics

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“…These results can be explained by the fact that, after annealing, the N atoms in the poly-GaN film reacted with the Ti metal to yield the TiN film on the poly-GaN film surface. Then, as reported by Hu et al [21], the TiN film acts as a diffusion barrier, preventing the diffusion of Au atoms to the polyGaN film. Therefore, the Au-Ga solid solution was not formed, as mentioned previously in the XRD analyses.…”

Section: Methodsmentioning

confidence: 69%

Low resistivity ohmic contact to n-type poly-GaN using a Ti/Au/Ni/Au multilayer metal system

Uen

Lan

et al. 2007

Solid-State Electronics

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“…Atmospheric nonthermal plasmas are used in various industrial processes [1][2][3]; they are used for a variety of applications [4], such as modifying the surface of polymer material [5], as well as cleaning [6] or coating [7] the surface of various materials. Many studies have been carried out on the voltage input method to generate the atmospheric non-thermal plasma, the shape of electrodes, and optimal application methods for various materials and purposes [8][9][10]. Its present applications are widespread, from being centrally used in vapor reactions, such as gas purification, and in surface reactions, such as surface processing.…”

Section: Introductionmentioning

confidence: 99%