Electrical response of amorphous silicon thin-film transistors under mechanical strain

Glesková, Helena; Wagner, S.; Soboyejo, WO; Suo, Zhigang

doi:10.1063/1.1513187

Cited by 158 publications

(106 citation statements)

References 17 publications

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“…The change in the on-current was 3.9%, and the change in the mobility was 1.6% with bending and the on/off ratio remained more than 10 5 . The ultra-thin film substrates help reduce the applied strain in the TFT devices, whereby the calculated strain was B0.5% or less, even when the devices were bent to a radius of 140 mm 38,39 . As several research groups have already reported, such a small degree of strain does not significantly change the electrical performance of organic TFT devices 39,40 .…”

Section: Articlementioning

confidence: 99%

Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films

et al. 2014

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Thin, ultra-flexible devices that can be manufactured in a process that covers a large area will be essential to realizing low-cost, wearable electronic applications including foldable displays and medical sensors. The printing technology will be instrumental in fabricating these novel electronic devices and circuits; however, attaining fully printed devices on ultra-flexible films in large areas has typically been a challenge. Here we report on fully printed organic thin-film transistor devices and circuits fabricated on 1-mm-thick parylene-C films with high field-effect mobility (1.0 cm 2 V À 1 s À 1 ) and fast operating speeds (about 1 ms) at low operating voltages. The devices were extremely light (2 g m À 2 ) and exhibited excellent mechanical stability. The devices remained operational even under 50% compressive strain without significant changes in their performance. These results represent significant progress in the fabrication of fully printed organic thin-film transistor devices and circuits for use in unobtrusive electronic applications such as wearable sensors.

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Section: Articlementioning

confidence: 99%

Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films

et al. 2014

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“…109 Further enhancement in the minimum of radii of curvature (R [1.6, 70] mm) is achieved in a-Si:H thin-film transistors (TFTs) fabricated on 25 lm thick Kapton foil. 169 …”

Section: B Stress Effects In Mosfetsmentioning

confidence: 99%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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Electronics that conform to 3D surfaces are attracting wider attention from both academia and industry. The research in the field has, thus far, focused primarily on showcasing the efficacy of various materials and fabrication methods for electronic/sensing devices on flexible substrates. As the device response changes are bound to change with stresses induced by bending, the next step will be to develop the capacity to predict the response of flexible systems under various bending conditions. This paper comprehensively reviews the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic). The discussion also includes variations in the device response due to crystal orientation, applied mechanics, band structure, and fabrication processes. Further, strategies for compensating or minimizing these bending-induced variations have been presented. Following the in-depth analysis, this paper proposes new mathematical relations to simulate and predict the device response under various bending conditions. These mathematical relations have also been used to develop new compact models that have been verified by comparing simulation results with the experimental values reported in the recent literature. These advances will enable next generation computer-aided-design tools to meet the future design needs in flexible electronics.

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“…[14]- [16] Mechanical stability of organic electronic devices has been thoroughly explored in the last decade, in particular for Organic Field-Effect Transistors (OFETs), and it was found that, in this kind of structure, the mechanical sensitivity is mainly related to the morphological characteristics of the organic semiconductor film. [17]- [21] Indeed, by applying a mechanical deformation inducing an elongation of a layer from L to L+∆L ,a surface strain ε = ΔL/L, is induced. In the case of thin-film devices, where the overall thickness of the device is negligible with respect to the one of the substrate (t sub ), the thin-film strain (ε) obtained by bending the substrate with a certain bending radius R is given by the relationship…”

Section: Introductionmentioning

confidence: 99%

Morphology Influence on the Mechanical Stress Response in Bendable Organic Field‐Effect Transistors with Solution‐Processed Semiconductors

Lai

Temiño

Cramer

et al. 2017

Adv Elect Materials

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The results not only demonstrate that the response to bending is reliant on the morphological properties of the films, but also that it can be tuned according to the bar-shearing direction. The employment of the proposed approach for the development of devices with different extent of response to mechanical deformation, from bending sensors to strain-insensitive devices for applications needing electrical stability upon deformation, can be thus foreseen.

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Electrical response of amorphous silicon thin-film transistors under mechanical strain

Cited by 158 publications

References 17 publications

Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films

Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Morphology Influence on the Mechanical Stress Response in Bendable Organic Field‐Effect Transistors with Solution‐Processed Semiconductors

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