Electrical transport properties of hydrogen-exposed n-type InSb films

Dawar, A. L.; Sachar, B.K.; Taneja, O. P.; Mathur, P. C.

doi:10.1016/0040-6090(81)90537-x

Thin Solid Films

1981

DOI: 10.1016/0040-6090(81)90537-x

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Electrical transport properties of hydrogen-exposed n-type InSb films

A. L. Dawar

B.K. Sachar

O. P. Taneja

et al.

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1983

1986

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Cited by 2 publications

References 10 publications

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Grain Boundary Scattering in Polycrystalline InSb

Nagabhooshanam¹,

Babu²

1986

Cryst. Res. Technol.

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Furthermore, this model explains well the lower life time in polycrystalline semiconductors (CARD, YANG) and the qualitative behaviour of the mobility versus doping concentration (KAIVUNS). For large dopant concentrations the interface states are filled and the boundary potential decreases towards zero and the polycrystalline semiconductor approaches the monocrystalline behaviour, as shown by KAMINS. However, from the theoretical point of view, this model is incomplete, in the sense that it does not consider how the transport from grain to grain takes place. For lowangle grain boundary potentials, the VOLGER model could be a suitable approach ; but for large boundary potentials, the transmission of the carriers across the potential barrier of the grain boundary must be taken into account.

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Grain Boundary Scattering in Polycrystalline InSb

Nagabhooshanam¹,

Babu²

1986

Cryst. Res. Technol.

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Temperature and Thickness Dependence of Electrical Conductivity of Flash-Evaporated InSb Films

Sharma

Reddy

1983

Phys. Stat. Sol. (a)

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The electrical conductivity as a function of film temperature, substrate temperature, and thickness is reported on InSb films flash evaporated onto gold seal glass, freshly cleaved mica and cleaved NaCl substrates in a vacuum of 6.7 >< 10-4 Pa. Post deposition annealing shows an interesting behaviour in the electrical conductivity. The structure of the films is found to improve with substrate temperature and single crystal growth is observed a t T, = 573 K. While the electrical conductivity shows an increasing behaviour with substrate temperature and thickness, the activation energy shows a decreasing trend.Die elektrische Leitfkhigkeit wird in Abhlngigkeit von der Schichttemperatur, Substrattemperatur und Dicke an InSb-Schichten untersucht, die auf goldversiegeltem Glas, frisch gespaltenem Glimmer und im Vakuum von 6,7 Y, Pa gespaltenen NaC1-Substraten blitzaufgedampft werden. Eine Temperung nach der Aufbringnng ergibt ein interessantes Verhalten der elektrischen Leitfihigkeit. Es wird gefunden, daB sich die Struktur der Schichten mit der Substrattemperatur verbessert und bei T, = 573 K wird Einkristallwachstum beobachtet. WIhrend die elektrische Leitfahigkeit mit der Substrattemperatur und Dicke ein steigendes Verhalten zeigt, hat die Aktivierungsenergie einen fallenden Trend.

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Electrical transport properties of hydrogen-exposed n-type InSb films

Cited by 2 publications

References 10 publications

Grain Boundary Scattering in Polycrystalline InSb

Grain Boundary Scattering in Polycrystalline InSb

Temperature and Thickness Dependence of Electrical Conductivity of Flash-Evaporated InSb Films

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