Electrically driven single-photon source at room temperature in diamond

Mizuochi, Norikazu; Makino, Toshiharu; Kato, Hiromitsu; Takeuchi, Daisuke; Ogura, Masahiko; Okushi, Hideyo; Nothaft, Maximilian; Neumann, Philipp; Gali, Ádám; Jelezko, Fedor; Wrachtrup, Jörg; Yamasaki, Satoshi

doi:10.1038/nphoton.2012.75

Cited by 324 publications

(347 citation statements)

References 29 publications

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“…Photon bunching around t ¼ 10 ns is evident in EL and especially in PL modes which is related to a dark metastable state. EL and PL modes differ most strikingly around t ¼ 0, where the EL anti-bunching exhibits a plateau characteristic of a double pump process 16,24 . Such a process may involve, for example, a two-step carrier capturing process.…”

Section: Resultsmentioning

confidence: 99%

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Single-photon emitting diode in silicon carbide

et al. 2015

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Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of 4300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

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Section: Resultsmentioning

confidence: 99%

“…To account for the plateau that is evident in the EL data, a third exponential term is required and yields an excellent fit. Such an empirical relation has a form that may be reflective of a four-level electronic system 16,24 . Fig.…”

Section: Resultsmentioning

confidence: 99%

Single-photon emitting diode in silicon carbide

et al. 2015

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“…Two strategies have been proposed to develop the desired single-photon sources [9]. One is to use "single-emitter" quantum systems [10,11] such as semiconductor quantum dots or color centers in diamond. These systems emit single photons nearly on-demand, and there is a trend to integrate these systems on photonic chips [12,13]; however, producing highly indistinguishable photons from distinct emitters remains challenging because of the difficulty in fabricating identical emitters at the nanoscale [14,15].…”

Section: Two Major Strategies For Single-photon Sourcesmentioning

confidence: 99%

CMOS-compatible photonic devices for single-photon generation

2016

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Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal-oxide-semiconductor (CMOS)-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon) and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

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“…In this case, the desired light source would be templated III-V quantum dots grown in the intrinsic region of a lateral Si p − i − n junction. While great progress in this field has been made [58][59][60][61][62][63][64], additional effort is needed to achieve the waveguide-integrated sources required for this system. Promisingly, electrically injected single-photon emission has been demonstrated in these materials [58][59][60][61].…”

Section: G Electrically-injected Light Sourcementioning

confidence: 99%

“…While great progress in this field has been made [58][59][60][61][62][63][64], additional effort is needed to achieve the waveguide-integrated sources required for this system. Promisingly, electrically injected single-photon emission has been demonstrated in these materials [58][59][60][61]. While single-photon emission is not a requirement for the present application, a desirable property of the emitters is that they have low photon number variance (defined as the standard deviation of the number of photons output for a given input current pulse over an ensemble of measurements).…”

Section: G Electrically-injected Light Sourcementioning

confidence: 99%

Superconducting Optoelectronic Circuits for Neuromorphic Computing

et al. 2017

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Neural networks have proven effective for solving many difficult computational problems. Implementing complex neural networks in software is very computationally expensive. To explore the limits of information processing, it will be necessary to implement new hardware platforms with large numbers of neurons, each with a large number of connections to other neurons. Here we propose a hybrid semiconductor-superconductor hardware platform for the implementation of neural networks and large-scale neuromorphic computing. The platform combines semiconducting few-photon light-emitting diodes with superconducting-nanowire single-photon detectors to behave as spiking neurons. These processing units are connected via a network of optical waveguides, and variable weights of connection can be implemented using several approaches. The use of light as a signaling mechanism overcomes fanout and parasitic constraints on electrical signals while simultaneously introducing physical degrees of freedom which can be employed for computation. The use of supercurrents achieves the low power density necessary to scale to systems with enormous entropy. The proposed processing units can operate at speeds of at least 20 MHz with fully asynchronous activity, light-speed-limited latency, and power densities on the order of 1 mW/cm 2 for neurons with 700 connections operating at full speed at 2 K. The processing units achieve an energy efficiency of ≈ 20 aJ per synapse event. By leveraging multilayer photonics with deposited waveguides and superconductors with feature sizes > 100 nm, this approach could scale to systems with massive interconnectivity and complexity for advanced computing as well as explorations of information processing capacity in systems with an enormous number of information-bearing microstates.

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Electrically driven single-photon source at room temperature in diamond

Cited by 324 publications

References 29 publications

Single-photon emitting diode in silicon carbide

Single-photon emitting diode in silicon carbide

CMOS-compatible photonic devices for single-photon generation

Superconducting Optoelectronic Circuits for Neuromorphic Computing

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