Electrically injected InAs∕GaAs quantum dot spin laser operating at 200K

Basu, D.; Saha, D.; Wu, Changxu; Holub, M.; Mi, Zetian; Bhattacharya, P.

doi:10.1063/1.2883953

Cited by 76 publications

(70 citation statements)

References 18 publications

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“…[5][6][7][8][9][10] Such spin injection has the potential to provide the key to applying the spin states of QDs to spin-functional optical devices, as one would need to inject spin-polarized carriers from electrodes into QDs to achieve a practical device structure. Indeed, spin-polarized light emitting diodes and lasers based on QDs have been discussed; [11][12][13][14] however, spin injection is recognized as being much more difficult than spin-independent carrier injection due to the relative instability of the spin states in layered semiconductors, which allows them to easily relax during the injection process.…”

Section: Introductionmentioning

confidence: 99%

Growth-temperature dependence of optical spin-injection dynamics in self-assembled InGaAs quantum dots

Yamamura

Kiba

Yang

et al. 2014

Journal of Applied Physics

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Articles you may be interested inThe growth-temperature dependence of the optical spin-injection dynamics in self-assembled quantum dots (QDs) of In 0.5 Ga 0.5 As was studied by increasing the sheet density of the dots from 2 Â 10 10 to 7 Â 10 10 cm À2 and reducing their size through a decrease in growth temperature from 500 to 470 C. The circularly polarized transient photoluminescence (PL) of the resulting QD ensembles was analyzed after optical excitation of spin-polarized carriers in GaAs barriers by using rate equations that take into account spin-injection dynamics such as spin-injection time, spin relaxation during injection, spin-dependent state-filling, and subsequent spin relaxation. The excitation-power dependence of the transient circular polarization of PL in the QDs, which is sensitive to the state-filling effect, was also examined. It was found that a systematic increase occurs in the degree of circular polarization of PL with decreasing growth temperature, which reflects the transient polarization of exciton spin after spin injection. This is attributed to strong suppression of the filling effect for the majority-spin states as the dot-density of the QDs increases.

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Section: Introductionmentioning

confidence: 99%

Growth-temperature dependence of optical spin-injection dynamics in self-assembled InGaAs quantum dots

Yamamura

Kiba

Yang

et al. 2014

Journal of Applied Physics

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“…The gain active (gain) region, usually consists of III-V quantum wells (QWs) or quantum dots (QDs). [7][8][9]26,[37][38][39] The key effect of the active region is producing a stimulated emission and coherent light that makes the laser such a unique light source. The corresponding optical gain that describes stimulated emission, under sufficiently strong pumping/injection of carriers, can be illustrated pictorially in Figs.…”

Section: Introductionmentioning

confidence: 99%

Toward high-frequency operation of spin lasers

Faria

Lee

et al. 2015

Phys. Rev. B

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Injecting spin-polarized carriers into semiconductor lasers provides important opportunities to extend what is known about spintronic devices, as well as to overcome many limitations of conventional (spin-unpolarized) lasers. By developing a microscopic model of spin-dependent optical gain derived from an accurate electronic structure in a quantum well-based laser, we study how its operation properties can be modified by spin-polarized carriers, carrier density, and resonant cavity design. We reveal that by applying an uniaxial strain it is possible to attain a large birefringence. While such birefringence is viewed as detrimental in conventional lasers, it could enable fast polarization oscillations of the emitted light in spin-lasers which can be exploited for optical communication and high-performance interconnects. The resulting oscillation frequency (> 200 GHz) would significantly exceed the frequency range possible in conventional lasers.

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“…The need for a quantum confined active material means that most spin-VCSEL research to date has been focused on quantum well (QW) materials, although advances in materials technology have led to an important line of research into quantum dot (QD) polarized light sources [8]. QD spin-VCSELs emitting at 983 nm have been successfully fabricated using a Schottky tunnel spin injection contact [9]; the maximum operating temperature reported is 230 K [10]. More recently, our group has reported the first QD spin-polarized vertical external-cavity surface-emitting laser (spin-VECSEL) [11]; this operates at room temperature and at the telecom wavelength of 1300 nm.…”

Section: Introductionmentioning

confidence: 99%

Stability Analysis of Quantum-Dot Spin-VCSELs

Alexandropoulos

Susanto

et al. 2016

Electronics

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Spin-polarized vertical-cavity surface-emitting lasers (spin-VCSELs) and vertical external-cavity surface-emitting lasers (spin-VECSELs) are of interest since their output polarization can be manipulated by spin-selective pumping, either optical or electrical. These devices, using quantum dot (QD) material for the active region, have shown instability (periodic oscillations) and polarization switching in previous theoretical simulations based on a rate equation model. It has been recognized that the polarization switching occurs between two possible sets of solutions, termed here in-phase and out-of-phase. The present contribution seeks to give enhanced understanding of these behaviors by applying a stability analysis to the system of equations used for such simulations. The results indicate that the choice of in-phase and out-of-phase solutions that appear in a time-dependent simulation is determined by the condition that the corresponding steady-state solutions are stable against small perturbations. The stability analysis is shown to be a valuable theoretical tool for future study of spin-V(E)SELs in the context of understanding and guiding future experimental research.

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Electrically injected InAs∕GaAs quantum dot spin laser operating at 200K

Cited by 76 publications

References 18 publications

Growth-temperature dependence of optical spin-injection dynamics in self-assembled InGaAs quantum dots

Growth-temperature dependence of optical spin-injection dynamics in self-assembled InGaAs quantum dots

Toward high-frequency operation of spin lasers

Stability Analysis of Quantum-Dot Spin-VCSELs

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