Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction

Bashar, Sunayna Binte; Wu, Chunxia; Suja, Mohammad; Tian, Hao; Shi, Wenhao; Liu, Jianlin

doi:10.1002/adom.201600513

Cited by 23 publications

(20 citation statements)

References 28 publications

(35 reference statements)

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“…Recently, WGM resonance has been widely used to enhance the sensitivity of gas sensors, such as for detecting carbon dioxide and water [2][3][4][5][6][7][8][9]. WGM enhanced lasing has been observed in some materials and circular structures [10][11][12][13][14][15][16][17][18]. It has been reported that random lasings (RLs) are generated by WGM resonance in disordered systems.…”

Section: Introductionmentioning

confidence: 99%

Whispering-Gallery-Mode for Coherent Random Lasing in a Dye-Doped Polystyrene Encapsulated Silica-Glass Capillary

et al. 2020

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Dye-doped polystyrene (DDPS) encapsulated in a silica-glass capillary with a diameter of 300 μm was fabricated through radical polymerization of styrene within the capillary. The coherent random lasing (RL) with full width at half maximum (FWHM) of 0.36 nm and a quality factor of 1608 was produced in the DDPS with the capillary when pumping at 532 nm. However, the incoherent RL with FWHM of 6.62 nm and a quality factor of 92 was produced in the DDPS without the capillary. A detailed investigation on this phenomenon by changing the diameter of the capillary and core refractive index (RI) reveals that there exists a strong whispering gallery mode (WGM) resonance in the capillary, which helps generate the coherent RL. The findings may open up a new approach for the fabrication of highly efficient photonic devices.

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Section: Introductionmentioning

confidence: 99%

Whispering-Gallery-Mode for Coherent Random Lasing in a Dye-Doped Polystyrene Encapsulated Silica-Glass Capillary

et al. 2020

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“…In this regard, zinc oxide (ZnO) nanowire (NW) is of particular interest. Owing to its unique electrical, optical, and mechanical properties, such as large direct bandgap (3.37 eV), piezoelectricity, and pyroelectricity, it finds diverse applications, including field effect transistor, field emission device, nanogenerator, UV laser, light emitting diode, sensor, and solar cell . On the other hand, silver (Ag) NW exhibits prominent surface plasmon resonance and low resistance, which helps in improving the nanowire junction conductance, and therefore it finds applications in various optoelectronic devices, including flexible displays, solar cells, and transparent conducting electrodes .…”

Section: Introductionmentioning

confidence: 99%

Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units

Ghosh

Chen

et al. 2018

Adv Elect Materials

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to develop an adequate method to combine them together and understand its charge transport mechanisms.Recent advancements in the field of welding of NWs research indicate its potential capabilities in fabrication and repairing nanoelectronics, [16][17][18][19] nanophotonics, [20] nanomedicine, [21] and nanoelectromechanical systems. [22] There are reports of successful nanowelding following various techniques, including thermal annealing, [23] optical welding, [24][25][26][27][28] capillarity-driven welding, [29] chemical welding, [30] spot welding, [31] stretchinduced cold-welding, [32][33][34] and welding by Joule heating. [35,36] Although much progress has been achieved in this field, there remains many cumbersome issues, such as necessitating complicated and expensive experimental setup, use of chemicals which can contaminate the system, and lack of robustness corresponding to mechanical strength and electrical connectivity, yet to be addressed. Furthermore, the joining of semiconductor and metal NWs remains a challenging issue for miniaturization and integration of next generation nanodevices as the melting points of these two different types of materials are different.In this article, we present a relatively simple technique to achieve adequate welding of ZnO NW with Ag NW and also both type of NWs with Au electrode toward realizing heterojunction-based electronic nanodevices. The effects of local heat generation in closely spaced semiconductor and metal nanostructures due to strong optical interactions have been utilized for melting and eventually welding these nanostructures. Following this technique, four different electronic devices (two devices consisting of one Schottky and two ohmic junctions, one device with two back-to-back Schottky junctions, and another one with three ohmic contacts) have been fabricated. The devices with one Schottky and two ohmic junctions have been fabricated following two different approaches for two different orientations of the ZnO (top/bottom) and Ag (bottom/top) NWs. Although the temperature difference between the melting points of ZnO and Ag NWs is about 1000 K, it has been demonstrated that the melting points of both NWs are reached simultaneously when ZnO NW in on top of Ag NW, which results in superior quality of welding. Thereafter, toward understanding the transport mechanisms of all these devices, the obtained currentvoltage (I-V) characteristic curves are analyzed in detail. This photothermal nanowelding technique paves the path for realizing heterostructure-based 1D electronic nanodevices.An improvised and comparatively inexpensive method for welding semiconductors and metal nanowires (NWs) utilizing a plasmon-enhanced photothermal effect is presented in this article. Different types of heterojunction-based (single Schottky junction and back-to-back Schottky junctions) electronic nanodevices are fabricated by welding various combinations of silver and ZnO NWs on two gold electrodes using continuous wave laser (λ = 532 nm) shots. It is inferred from the current-vo...

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“…Due to its indirect fundamental bandgap and apparent optical direct transition occurred at high energy side (3.6 eV), it appears attractively as transparent conducting oxides (TCO) and the most promising p‐type material for ultraviolet (UV) optoelectronic devices . Zinc oxide (ZnO) is an n‐type semiconductor with a wide direct bandgap (3.37 eV) and a large exciton binding energy (60 meV) at room temperature . Considering the ZnO and CGO have highly matched lattice parameters ( a lattice parameters are only mismatched by 10%), the heteroepitaxial relationship at this interface is highly probable.…”

Section: Introductionmentioning

confidence: 99%

“…[12][13][14][15] Zinc oxide (ZnO) is an n-type semiconductor with a wide direct bandgap (3.37 eV) and a large exciton binding energy (60 meV) at room temperature. [16][17][18] Considering the ZnO and CGO have highly matched lattice parameters (a lattice parameters are only mismatched by 10%), the heteroepitaxial relationship at this interface is highly probable. Furthermore, the p-type CGO and n-type ZnO can form a type II staggered band alignment, and such a band alignment could facilitated the transfer of excited holes and electrons.…”

Section: Introductionmentioning

confidence: 99%

Interface State Luminescence and Sub‐Bandgap Absorption Based on CuGaO₂ Nanoplates/ZnO Nanowires Heterostructure Arrays

Wang

et al. 2018

Physica Status Solidi (b)

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In this paper, the vertical arrays of ZnO nanowires (NWs) are uniformly grown on the surface of hexagonal CuGaO2 (CGO) nanoplates (NPs) through the hydrothermal method, forming the high‐density p–n heterojunction. The photoluminescence (PL) properties of these hetero‐assembled structures are characterized, and an obvious ultraviolet (UV) emission centered at 392.32 nm has been observed. Compared with the PL spectra of pure ZnO NWs, the UV peak red‐shift occurred and the spectrum broadened almost 2.5 times. A new emission located at 398 nm is attributed to the interface recombination which has been found through the Gaussian fitting. Furthermore, a red‐shift also appears in the absorption spectra of CGO NPs/ZnO NWs heterostructure, and the variation of light absorption properties results from the sub‐bandgap absorption effect in the p–n junction region. The light emission and absorption mechanisms occurring at the heterojunction have been investigated in terms of energy band theory. This work offers a new insight to realize micro/nano optoelectronic devices based on p‐CGO NPs/n‐ZnO NWs hetero‐assembled structures.

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Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction

Cited by 23 publications

References 28 publications

Whispering-Gallery-Mode for Coherent Random Lasing in a Dye-Doped Polystyrene Encapsulated Silica-Glass Capillary

Whispering-Gallery-Mode for Coherent Random Lasing in a Dye-Doped Polystyrene Encapsulated Silica-Glass Capillary

Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units

Interface State Luminescence and Sub‐Bandgap Absorption Based on CuGaO₂ Nanoplates/ZnO Nanowires Heterostructure Arrays

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Electrically Pumped Whispering Gallery Mode Lasing from Au/ZnO Microwire Schottky Junction

Cited by 23 publications

References 28 publications

Whispering-Gallery-Mode for Coherent Random Lasing in a Dye-Doped Polystyrene Encapsulated Silica-Glass Capillary

Whispering-Gallery-Mode for Coherent Random Lasing in a Dye-Doped Polystyrene Encapsulated Silica-Glass Capillary

Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units

Interface State Luminescence and Sub‐Bandgap Absorption Based on CuGaO2 Nanoplates/ZnO Nanowires Heterostructure Arrays

Contact Info

Product

Resources

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Interface State Luminescence and Sub‐Bandgap Absorption Based on CuGaO₂ Nanoplates/ZnO Nanowires Heterostructure Arrays