Electrically tunable detector of THz-frequency signals based on an antiferromagnet

Abstract

A concept of an electrically tunable resonance detector of THz-frequency signals based on an antiferromagnetic/heavy metal (AFM/HM) heterostructure is proposed. The conversion of a THz-frequency input signal into DC voltage is done using the inverse spin Hall effect in an (AFM/HM) bilayer. An additional bias DC in the HM layer can be used to vary the effective anisotropy of the AFM and, therefore, to tune the antiferromagnetic resonance (AFMR) frequency. The proposed AFM/HM heterostructure works as a resonance-type quadratic detector, which can be tuned by the bias current in the range of at least 10% of the AFMR frequency, and our estimations show that the sensitivity of this detector could be comparable to that of modern detectors based on the Schottky, Gunn, or graphene-based diodes.

Antiferromagnetic Parametric Resonance Driven by Voltage-Controlled Magnetic Anisotropy

“…Therefore, VCMA parametric pumping is not only 1-2 orders of magnitude more efficient than microwave magnetic field pumping, but also allows for parametric excitation in zero bias magnetic field, which is impossible to achieve with magnetic field pumping. Our results open the possibility of realization of power-efficient high frequency AFM-based devices, such as tunable electrical detectors [43,44].…”

Perspectives on spintronic diodes

“…Point (ii) is a dominant factor in determining the antiferromagnetic domains and can drive local variation of magnetic parameters with the creation of magnetic grains with size of the order of tens of nanometers. A direction to tackle (iii) can be a generalization of what proposed by Safin et al 45 and then involving inverse spin-Hall effect, and spin-pumping due to AFMs and heavy metals, such as Pt (see Fig. 2(c)).…”

“…While antiferromagnetic switching at THz has been already demonstrated experimentally, 42 most device concepts for THz Spintronics, such as detectors, still remain on the paper. [43][44][45] Most of the proposals for antiferromagnetic STDs are based on multiterminal devices where the SOT is the main mechanism driving the dynamics. Khymyn et al 43 predicted passive STD with a sensitivity of 10 2 -10 3 V/W, comparable with the Schottky diodes, in nanoscale materials with bi-axial anisotropy.…”

“…2(a). Current-tunable THz detectors 45 can be obtained by biasing the device in a sub-critical regime (Fig. 2(b)).…”

Детектирование Терагерцевых Электромагнитных Волн С Помощью Проводящих Антиферромагнетиков

“…Ранее [6] была предложена схема генератора THz-колебаний, перестраиваемого по частоте спин-поляризованным током. В [7] двухслойная структура, состоящая из АФМ и слоя тяжелого металла (ТМ), использовалась для детектирования терагерцевого спинового тока, а в [8,9] был предложен механизм перестройки частоты детектора THz-колебаний на основе АФМ с помощью постоянного электрического тока. Легким способом перестройки частоты такого детектора является изменение анизотропии АФМ с помощью магнитострикции [10] или температуры [11].…”