2013
DOI: 10.1063/1.4818157
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Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure

Abstract: An electrically tunable Au/N-ZnO/ZnO/Al film bulk acoustic resonator (FBAR) is proposed. The stack resonator is Au-piezoelectric ZnO layer-Al while Schottky diode junction is Au/N-ZnO semiconductor layer. The FBAR's resonance frequency changes as the junction capacitance decreases with reverse bias. Our experiments gave a frequency shift of ∼30 kHz/V at 1.46 GHz, maximum insertion loss ∼0.7 dB, and a very high Q factor above 1200. Circuit simulations indicated a tunable range of ∼3.8 MHz from optimizing the FB… Show more

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Cited by 17 publications
(5 citation statements)
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“…The devices were fabricated by identical conditions, and the scatter of the Q-values is mainly caused by the variation of ZnO thickness and crystal quality on copper and paper substrates, on which the deposition processes are yet to be optimized as they have very different thermal capacities and conductivities from that of Si (or glass). Nevertheless, the results demonstrate that FBARs can be fabricated on any substrate with a polymer support layer, and a Q -factor over 500 is achievable if the process is optimized, which is comparable to or better than those reported using traditional architectures 43 44 45 .…”
Section: Resultsmentioning
confidence: 60%
“…The devices were fabricated by identical conditions, and the scatter of the Q-values is mainly caused by the variation of ZnO thickness and crystal quality on copper and paper substrates, on which the deposition processes are yet to be optimized as they have very different thermal capacities and conductivities from that of Si (or glass). Nevertheless, the results demonstrate that FBARs can be fabricated on any substrate with a polymer support layer, and a Q -factor over 500 is achievable if the process is optimized, which is comparable to or better than those reported using traditional architectures 43 44 45 .…”
Section: Resultsmentioning
confidence: 60%
“…The electron concentration measured using the Hall Effect was ~ 10 17 cm −3 . The top Au electrode and n-ZnO form a Schottky barrier 18 . The Schottky barrier's capacitance, which can be changed under UV exposure, in-turn, modifies the entire FBAR resonant frequency.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, microelectromechanical system resonators have been thoroughly studied for applications such as gas identification and biological substance detection [3,4]. A popular type of microelectromechanical system piezoelectric resonator is made by using a piezoelectric film no thicker than a few micrometres, composed of substances such as lead zirconate titanate (PZT), aluminium nitride or zinc oxide, to form a film bulk acoustic wave resonator [5][6][7][8]. The resonator converts electrical energy into acoustic energy through an alternating electric field, and its resonant frequency depends on the thickness of the piezoelectric material.…”
Section: Introductionmentioning
confidence: 99%