The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, or as a gravimetric sensor for biochemical or physical sensing. Current device architectures require the use of an acoustic mirror or a freestanding membrane and are fabricated as discrete components. A new architecture is demonstrated which permits fabrication and integration of FBARs on arbitrary substrates. Wave confinement is achieved by fabricating the resonator on a polyimide support layer. Results show when the polymer thickness is greater than a critical value, d, the FBARs have similar performance to devices using alternative architectures. For ZnO FBARs operating at 1.3–2.2 GHz, d is ~9 μm, and the devices have a Q-factor of 470, comparable to 493 for the membrane architecture devices. The polymer support makes the resonators insensitive to the underlying substrate. Yields over 95% have been achieved on roughened silicon, copper and glass.

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 1017 cm−3. A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm2, the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure.

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