Electro-optic response in epitaxially stabilized orthorhombic 
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Reynaud, Marc; Chen, Pei-Yu; Li, Wente; Paoletta, Therese; Kwon, Sunah; Lee, Dae Hun; Beskin, Ilya; Posadas, Agham; Kim, Moon J.; Landis, Chad M.; Lai, Keji; Ekerdt, John G.; Demkov, Alexander A.

doi:10.1103/physrevmaterials.5.035201

Cited by 11 publications

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“…Previously, we have shown that for a 40 nm thick, mm 2-oriented BTO, the electro-optic responses between the 45°- and 0°-oriented pads were comparable, with the 0° pad EO response being about 70% of the 45° pad (85 pm/V and 121 pm/V, respectively) . In that study, the factor ν was not used as it was assumed that the entire film was causing modulation, regardless of contact pad angle. In comparison, for 4 mm BTO, results have shown that the difference between the responses is much larger, where the 0° pad gives only about 30% of the EO response as compared to the 45° pad .…”

Section: Resultsmentioning

confidence: 99%

“…The spin–orbit splitting is indicated in each part of the figure, and the composition was quantified by comparing the integrated areas under the peaks of the relevant spectral regions, which are highlighted in blue. These integrated areas were normalized by using the relative sensitivity factors for each core level and the inelastic mean free path of electrons in the BTO film . The composition ratios for the 100 nm thick film at the surface (shown in Figure b) were 52:48 for Ba 4d/Ti 2p and 50:50 for Ba 3d/Ti 2p.…”

Section: Methodsmentioning

confidence: 99%

“…We employed the finite element method to implement the phase-field simulations and solve the free energy model of the BTO film. The details of the phase-field simulations method can be found in multiple references. ,− …”

Section: Methodsmentioning

confidence: 99%

“…The electro-optic setup used in this experiment has been described previously. , Briefly, metal contact pads with 7 μm gaps and different orientations with respect to the BTO polar axis were deposited on the thin film stack using photolithography and lift-off to enable us to apply both DC and AC voltages across the BTO. The measurements were performed at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…One method to ensure that the film’s polarization is immediately in-plane is to add a buffer layer between BTO and STO, with a lattice constant larger than that of BTO. Previously, we have used BaSnO 3 as an interlayer between BTO and an STO substrate and demonstrated in-plane polarization of the BTO in films as thin as 40 nm . Another material that can be used for this purpose is MgO, whose lattice constant of ∼4.212 Å is larger than either of BTO’s lattice constants, 3.996 and 4.036 Å.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Si-Integrated BaTiO₃ for Electro-Optic Applications: Crystalline and Polarization Orientation Control

Reynaud,

Huyan,

et al. 2023

ACS Appl. Electron. Mater.

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Recent research has demonstrated that BaTiO3 epitaxially grown on Si is capable of a large electro-optical response via the Pockels effect crucial for fabricating efficient phase modulators in integrated silicon photonics. However, the typical crystallographic orientation evolution of epitaxial BaTiO3 on SrTiO3-buffered Si yields a dead layer (a region of the film with a low electro-optic response) for most device geometries. We report on a Si-on-insulator-integrated film stack incorporating a MgO buffer layer that effectively alleviates this problem. The film quality is confirmed with crystallographic characterization; electro-optic measurements yield an effective Pockels coefficient of 119 pm/V for a 100 nm thick film.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Si-Integrated BaTiO₃ for Electro-Optic Applications: Crystalline and Polarization Orientation Control

Reynaud,

Huyan,

et al. 2023

ACS Appl. Electron. Mater.

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Tuning the Electro‐Optic Properties of BaTiO₃ Epitaxial Thin Films via Buffer Layer‐Controlled Polarization Rotation Paths

Yu,

Guo,

Deng

et al. 2024

Adv Funct Materials

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BaTiO3 thin films emerge as a highly promising material platform for integrated photonics due to their outstanding electro‐optic properties and diverse functionalities. Despite extensive studies, there remains a notable gap in the understanding of the intricate relationship between the phase structure, domain switching kinetics and electro‐optic performance of these materials. By controlling the structural phase evolution, it is possible to gain deep insights into the physical mechanisms underlying the electro‐optic performance. Here, the phase constitution of BaTiO3 epitaxial thin films is successfully tuned by the insertion of a GdScO3 buffer layer. Continuous polarization rotation paths are observed from an out‐of‐plane tetragonal‐like phase, to an intermediate rhombohedral‐like phase, and finally an in‐plane tetragonal‐like phase, achieving an enhanced effective electro‐optic coefficient of 175 pm V−1 compared to unbuffered films. Furthermore, by in situ second harmonic generation microscopy and electro‐optic measurements, the domain switching behaviors in both statistical and spatially resolved manners are examined, resulting in a clear delineation of the key domain nucleation processes. The in‐depth explorations of these structural mechanisms and kinetics inform the rational design of strong electro‐optic thin films and help in the realization of high‐performance integrated photonic devices such as electro‐optic modulators and multilevel phase shifters.

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Enhanced Electro‐Optic Coefficients in Single‐Crystalline BaTiO₃ Thin Films Enabled by Domain Alignment

Wen,

Cao,

Chen

et al. 2024

Advanced Optical Materials

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In silicon photonics, BaTiO3 (BTO) emerges as a promising electro‐optic (EO) integrated material due to its excellent EO modulation capabilities. Nevertheless, the EO response of multi‐domain BTO thin films tends to be lower than that of bulk materials. BTO thin films are fabricated with strong EO responses utilizing the pulsed laser deposition technique. Considering the importance of the SrTiO3 (STO) buffer layer, a series of epitaxial BTO thin films are deposited on STO substrates with engineered domain alignment. Given the contribution of domain variants in BTO thin films to their EO response, specific electrode patterns are designed to enhance their performance. An effective Pockels coefficient of 286 pm V−1 is determined for the BTO thin film via the transmission geometry method, which surpasses recent reports. Through domain engineering in the BTO thin film, the remarkable enhancement in the EO response arising from in‐plane polarization (a‐axis) characteristics is confirmed. Simultaneously, utilizing the Second Harmonic Generation (SHG) optical probe, deep exploration into the domain dynamics within BTO thin films is conducted. These findings provide insights into the contribution of domain variants to the EO response and shed light on further developing silicon‐based heterogeneously integrated devices.

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Electro-optic response in epitaxially stabilized orthorhombic mm2 BaTiO3

Cited by 11 publications

References 40 publications

Si-Integrated BaTiO₃ for Electro-Optic Applications: Crystalline and Polarization Orientation Control

Si-Integrated BaTiO₃ for Electro-Optic Applications: Crystalline and Polarization Orientation Control

Tuning the Electro‐Optic Properties of BaTiO₃ Epitaxial Thin Films via Buffer Layer‐Controlled Polarization Rotation Paths

Enhanced Electro‐Optic Coefficients in Single‐Crystalline BaTiO₃ Thin Films Enabled by Domain Alignment

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Electro-optic response in epitaxially stabilized orthorhombic mm2 BaTiO3

Cited by 11 publications

References 40 publications

Si-Integrated BaTiO3 for Electro-Optic Applications: Crystalline and Polarization Orientation Control

Si-Integrated BaTiO3 for Electro-Optic Applications: Crystalline and Polarization Orientation Control

Tuning the Electro‐Optic Properties of BaTiO3 Epitaxial Thin Films via Buffer Layer‐Controlled Polarization Rotation Paths

Enhanced Electro‐Optic Coefficients in Single‐Crystalline BaTiO3 Thin Films Enabled by Domain Alignment

Contact Info

Product

Resources

About

Si-Integrated BaTiO₃ for Electro-Optic Applications: Crystalline and Polarization Orientation Control

Si-Integrated BaTiO₃ for Electro-Optic Applications: Crystalline and Polarization Orientation Control

Tuning the Electro‐Optic Properties of BaTiO₃ Epitaxial Thin Films via Buffer Layer‐Controlled Polarization Rotation Paths

Enhanced Electro‐Optic Coefficients in Single‐Crystalline BaTiO₃ Thin Films Enabled by Domain Alignment