Thick epitaxial BaTiO 3 films ranging from 120 nm to 1 μm were grown by off-axis RF magnetron sputtering on SrTiO 3 -templated silicon-on-insulator (SOI) substrates for use in electro-optic applications, where such large thicknesses are necessary. The films are of high quality, rivaling those grown by molecular beam epitaxy (MBE) in crystalline quality, but can be grown 10 times faster. Extraction of lattice parameters from geometric phase analysis of atomic-resolution scanning transmission electron microscopy images revealed how the in-plane and out-of-plane lattice spacings of sputtered BaTiO 3 changes as a function of layer position within a thick film. Our results indicate that compared to molecular beam epitaxy, sputtered films retain their out-of-plane polarization (c-axis) orientation for larger thicknesses. We also find an unusual re-transition from in-plane polarization (a-axis) to out-ofplane polarization (c-axis), along with an anomalous lattice expansion, near the surface. We also studied a method of achieving 100% a-axis-oriented films using a two-step process involving amorphous growth and recrystallization of a seed layer followed by normal high temperature growth. While this method is successful in achieving full a-axis orientation even at low thicknesses, the resulting film has a large number of voids and misoriented grains. Electro-optic measurement using a transmission setup of a sputtered BTO film grown using the optimized conditions yields an effective Pockels coefficient as high as 183 pm/V. A Mach− Zehnder modulator fabricated on such films exhibits phase shifting with an equivalent Pockels coefficient of 157 pm/V. These results demonstrate that sputtered BTO thick films can be used for integrated electro-optic modulators for Si photonics.

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The explosive rise of silicon photonics has led to renewed interest in the electro-optic (EO) or Pockels effect due to its potential uses in many next generation device applications. To find materials with a strong EO response in thin film form, which are essential for low power and small footprint devices, one needs to find a general design rule for strong Pockels materials. To elucidate what makes the Pockels effect strong, we study the effect in LiB 3 O 5 (LBO) and CsB 3 O 5 (CBO) and use these materials as prototypical examples of where conventional wisdom breaks down. We find the Pockels tensor components to be extremely small in both materials, despite the large degree of anharmonicity in the crystals, which has been used as a proxy for the presence of nonlinear electronic effects. We relate the lack of EO response to the large optical phonon frequencies (despite the relatively large Raman susceptibility) in LBO and to the small Raman susceptibility (despite the low phonon frequencies) in CBO, respectively. We shed light on the underlying physical phenomena behind the Raman susceptibility, which we find to be intimately linked to the electron-phonon coupling strength of the near-edge electronic states, and identify a route to discovering new strong EO materials.

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