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Integrated Si photonics has the potential to revolutionize the processing of information between different integrated chips, as well as within a single chip itself. By performing at least a part of the task with photons rather than electrons, new opportunities for broad‐band low‐power communication and computing are created. Herein, the theoretical description of the linear electro‐optic (EO), or Pockels, effect and a newly elucidated design rule for materials evaluation is summarized. Possible applications of Si‐integrated optical elements based on perovskite oxides and their heterostructures are also discussed. In particular, the Pockels effect in BaTiO3 films grown on Si and intersubband transitions in Si‐integrated perovskite quantum wells (QWs) is described.

We theoretically investigate the interfacial magnetoelectric effect in the BaTiO3/Ni heterostructure. We find that magnetoelectric coupling, specifically, the dependence of the magnetic moment of Ni on the polarization direction, primarily stems from the flow of the screening charge from Ni into BaTiO3 with a minor contribution coming from interfacial chemical bonding. The estimated change in the magnetic moment from screening with respect to bulk Ni is as high as ∼7%, which is a significant modulation. We also examine the effects of interfacial oxidation on the electronic structures and the strength of magnetoelectric coupling in the BaTiO3/NiO/Ni structure. We find an enhancement of the interfacial bonding contribution, making it unfavorable for interfacial magnetoelectric modulation. In addition, we consider the effect of the Ni magnetic domain wall on interfacial coupling and find it to be negligible to the interfacial magnetoelectric effect.