2012
DOI: 10.1364/oe.20.026922
|View full text |Cite
|
Sign up to set email alerts
|

Electro-optical tunable waveguide Bragg gratings in lithium niobate induced by femtosecond laser writing

Abstract: We report the fabrication of femtosecond laser-induced, first-order waveguide Bragg gratings in lithium niobate in the low repetition rate regime. Type-II waveguides are written into an x-cut lithium niobate wafer and structured periodically to achieve narrowband reflections at wavelengths around 1550 nm. Additionally, electrodes are employed to allow for electro-optic tuning of the spectral response. We demonstrate wavelength control of the central reflection peak by applying a static external electric field.… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
30
0

Year Published

2013
2013
2023
2023

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 47 publications
(31 citation statements)
references
References 24 publications
1
30
0
Order By: Relevance
“…Using this technology for devices operating in the telecom band can add further advantages because the insertion losses of these devices in an optical fiber network are very low, due to the almost perfect mode matching and the reduced propagation losses 20,21 . The quality of photonic circuits written via femtosecond lasers has been proven by the demonstration of several classical devices in glass as waveguide amplifiers, lasers, broadband couplers, and demultiplexers [22][23][24][25] , as well as the writing of electro-optic modulators in crystals 26,27 . Although this fabrication technology has been widely used to produce quantum devices in the 800-nm wavelength range, no investigation on the performances of these devices at telecom wavelengths in the quantum regime has been performed.…”
Section: Introductionmentioning
confidence: 99%
“…Using this technology for devices operating in the telecom band can add further advantages because the insertion losses of these devices in an optical fiber network are very low, due to the almost perfect mode matching and the reduced propagation losses 20,21 . The quality of photonic circuits written via femtosecond lasers has been proven by the demonstration of several classical devices in glass as waveguide amplifiers, lasers, broadband couplers, and demultiplexers [22][23][24][25] , as well as the writing of electro-optic modulators in crystals 26,27 . Although this fabrication technology has been widely used to produce quantum devices in the 800-nm wavelength range, no investigation on the performances of these devices at telecom wavelengths in the quantum regime has been performed.…”
Section: Introductionmentioning
confidence: 99%
“…Again downstream data is shared among multiple ONUs through the 1 × 32 optical splitter. We assumed the insertion losses of 3 dB [34] for both CO AWG and RN AWG. 16.5 dB losses are also considered for the splitter [39].…”
Section: Simulation Setup and Resultsmentioning
confidence: 99%
“…At each output port of RN AWG, two contiguous wavelengths are transmitted, thus providing up to 20 Gbps data rate. To increase the AWG channel spacing or to shift the AWG central frequency, electro-optical tunable AWG [33,34] or thermo-optical tunable AWG [33][34][35] can be used. Thermo-optic tunable silicon-based AWG using TiN heater has already been demonstrated in [34].…”
Section: Other Illustrative Examples Of Proposed Architecturementioning
confidence: 99%
See 1 more Smart Citation
“…For comparison, Table 1 lists κ values for The duty cycle was fixed at 35%, whereas the writing pulse energy was varied. [21] PbP 1551 25 -Boro-aluminosilicate (Eagle2000) [22] PbP 1551 145 0.6 Boro-aluminosilicate (Eagle2000) [23] PbP 1550 472 0.5 Soda-lime [27] Two-step PbP 1577 14 -Fused silica [26] Modulated burst 1548 111 1.5 Er:Yb codoped phosphate [30] Modulated burst 1537 242 -Yb-doped phosphate [42] Modulated burst 1535 221 -Boro-aluminosilicate (Eagle2000) [31] Modulated burst 1551 713 -Fused silica [43] Modulated burst 1546 36 0.7 Boro-aluminosilicate (Eagle2000) [24] PbP 799 65 -Boro-aluminosilicate (Eagle2000) [28] Modulated burst 1552 157 -ZBLAN [29] PbP überstructure 1550 324 -Boro-aluminosilicate (Eagle2000) [44] Multiscan modulated burst 1563 177 -LiNbO 3 [45] Modulated burst stressors 1540 45 -Boro-aluminosilicate (Eagle2000) [41] PbP 648 136 -Boro-aluminosilicate (Eagle2000) [41] PbP 698 183 0.8 Boro-aluminosilicate (Eagle2000) [41] PbP 748 187 -Boro-aluminosilicate (Eagle2000) [41] PbP 798 163 -Fused silica [46] Modulated burst 1550 210 2.2 Fused silica [47] Modulated burst 1549 280 < 1 Chalcogenide (GLS) [48] Modulated burst 1551 179 -LiNbO 3 [49] Multiscan modulated burst (depressed clad) 1558 1230 1.52-3.51 Boro-aluminosilicate (Eagle2000) [50] Two-step PbP 1545 120 -Fused silica [25] PbP (waveguide bundle) 840 126 -Fused silica [25] PbP (waveguide bundle) 1550 220 1.6 Borosilicate (AF45) [51] Modulated …”
Section: Coupling Coefficient κmentioning
confidence: 99%