1975
DOI: 10.1143/jpsj.38.1698
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Electroabsorption of GaS around the Indirect Edge

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1977
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Cited by 16 publications
(13 citation statements)
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“…2. The value of E g = 2.595 eV at 77 K from (1) agrees with the obtained value of 2.591 eV from the electroabsorption measurements performed by Sasaki et al [1]. The variation rate of the PB emission band is almost the same as that of E g .…”
Section: Methodssupporting
confidence: 90%
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“…2. The value of E g = 2.595 eV at 77 K from (1) agrees with the obtained value of 2.591 eV from the electroabsorption measurements performed by Sasaki et al [1]. The variation rate of the PB emission band is almost the same as that of E g .…”
Section: Methodssupporting
confidence: 90%
“…Gallium sulfide (GaS) is a layered semiconductor which has an indirect band-gap energy of about 2.6 eV at 77 K [1]. In view of its possible application to optoelectronic devices in the visible range [2], a great deal of attention has been devoted to the study of the optical and electrical properties of GaS [3 -9].…”
Section: Introductionmentioning
confidence: 99%
“…The phonon energies of 88 and 98 meV obtained from the electroabsorption measurement are due to the combination of phonon energy [1]. The PE emission band related to the phonon energy of 97 meV is enhanced in the Zn-doped sample of [Zn]=1.0 at%.…”
Section: Resultsmentioning
confidence: 95%
“…Sasaki et al, reported that six phonon energies are obtained from the electroabsorption spectra of GaS at 77 K [1]. The obtained values of the phonon energy are 11, 21, 39, 48, 88, and 98 meV.…”
Section: Resultsmentioning
confidence: 99%
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