Mg 2 Si thermoelectric (TE) elements and modules were fabricated using a commercial polycrystalline Mg 2 Si source. A monobloc plasma-activated sintering technique was used to fabricate the TE elements and Ni electrodes. The TE modules were composed of n-type Mg 2 Si, using pin-fin structure elements, in order to achieve simple assembly and to realize stable operation at a temperature of $800 K. The dimensions of each pin-fin element were 4.2 mm 9 4.2 mm 9 9.8 mm, and the TE module comprised nine pin-fin elements connected in series. The output characteristics of the pin-fin elements and the TE module were evaluated at temperature differences, DT, ranging from 100 K to 500 K. The observed values of open-circuit voltage (V OC ) and output power (P) of a single pin-fin element were 98.7 mV and 50.9 mW, respectively, at the maximum DT of 500 K. The maximum V OC and P values for the TE module were 588 mV and 174.3 mW, respectively, at DT = 500 K.