Electrochemical Behavior of Titanium Nitride Thin Films Deposited on Silicon by Plasma Discharge Technique in Cathodic Cage

Abstract

Titanium nitride films were deposited on silicon by plasma discharge in cathodic cage with holes and without holes on the sides. Each film was deposited with a pressure of 253 Pa, treatment time of 2 h, and at diverse conditions of temperature and gas flow of N 2 and H 2 . The electrochemical polarization and electrochemical impedance techniques were used to understand the effect on the electrochemical properties of these films in relation to the presence or absence of holes on the sides of the cathodic cage and to investigate the electrochemical behavior of the films formed, which presented as both capacitive and resistive for the conditionsanalyzed.

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