Electrochemical growth of n-ZnO onto the p-type GaN substrate: p-n heterojunction characteristics

Abstract

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Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1–x Ge x alloy heterojunction

“…One such application is in light emitting diode (LED) devices. Compared with devices based on thin films [1][2][3], nanowire-based LEDs not only avoid the total internal reflection between films but also have higher extraction efficiency by virtue of the waveguiding properties of the nanowires [4][5][6]. ZnO nanowires are regarded as one of the most promising materials for next-generation optoelectronics due to their large exciton binding energy and wide direct bandgap energy at room temperature [7].…”

Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

“…However, it is very difficult to obtain p-ZnO and intrinsic ZnO (i-ZnO) films, because the ZnO semiconductor naturally exhibits n-type conduction behaviors owing to the low formation energy of shallow donors induced by oxygen vacancies or zinc interstitials [7,8]. Consequently, n-ZnO films were mostly used in various devices by forming heterojunction with other p-type semiconductors [9][10][11]. Among them, in view of the same crystal structure and the similar lattice constant, the structures of the n-ZnO films deposited on the p-GaN-based semiconductors were widely used in various devices [12][13][14].…”

Preparation of heterostructured Ag/BaTiO3 nanofibers via electrospinning

“…Many methods could be adopted for preparing heterostructured nanofibers including thermal evaporation method [5], electrochemical deposition (ECD) [6], hydrothermal [7], vapor-liquid-solid epitaxy (VLS) [8], chemical vapor deposition, etc. Electrospinning is one of the newly developed methods for synthesis nanofibers due to its low cost and facile process [9].…”