2019
DOI: 10.3390/c5010007
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Electrochemical Reaction in Hydrogen Peroxide and Structural Change of Platinum Nanoparticle-Supported Carbon Nanowalls Grown Using Plasma-Enhanced Chemical Vapor Deposition

Abstract: Hydrogen peroxide (H 2 O 2 ) reactions on platinum nanoparticle-decorated carbon nanowalls (Pt-CNWs) under potential applications were investigated on a platform of CNWs grown on carbon fiber paper (CFP) using plasma-enhanced chemical vapor deposition. Through repeated cyclic voltammetry (CV), measurements of 1000 cycles using the Pt-CNW electrodes in phosphate-buffered saline (PBS) solution with 240 µM of H 2 O 2 , the observed response peak currents of H 2 O 2 reduction decreased with the number of cycles, w… Show more

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Cited by 6 publications
(5 citation statements)
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“…The positive value of R H indicated that the fabricated samples have p-type electrical conduction, at room temperature. Even though the values are slightly smaller, these results are similar to others from literature; the buffer layer was changed as indium tin oxide [39] or titanium nitride [9].…”
Section: Resultssupporting
confidence: 90%
See 3 more Smart Citations
“…The positive value of R H indicated that the fabricated samples have p-type electrical conduction, at room temperature. Even though the values are slightly smaller, these results are similar to others from literature; the buffer layer was changed as indium tin oxide [39] or titanium nitride [9].…”
Section: Resultssupporting
confidence: 90%
“…Journal of Nanomaterials despite this, the formation of clusters is reduced and a lot of individual edges can be still observed. This property is an intrinsic one, and it is related to the self-support feature of such architectures [9]. As expected, the large value of the height of CNWs is strongly correlated with the working time [7].…”
Section: Resultssupporting
confidence: 63%
See 2 more Smart Citations
“…CNWs were deposited on silicon (Si) substrates using radical injection-plasma enhanced chemical vaper deposition (RI-PECVD) equipment. 10,11,15,16,[26][27][28][29] The substrates used a low-resistivity (⩽0.1 Ω cm) n-type Si (100) wafer. The equipment used a tandem structure with a surface wave plasma (SWP) and a very high frequency (VHF) capacitively coupled plasma (CCP) source connected by a showerhead type CCP electrode.…”
Section: Experimental Methodsmentioning
confidence: 99%