The
dye distribution within a photo-electrode is a key parameter
in determining the performances of dye-sensitized photon-to-electron
conversion devices, such as dye-sensitized solar cells (DSSCs). A
traditional, depth profiling investigation by destructive means including
cross-sectional sampling is unsuitable for large quality control applications
in manufacturing processes. Therefore, a non-destructive monitoring
of the dye depth profile is required, which is the first step toward
a non-destructive evaluation of the internal degradation of the device
in the field. Here, we present a conceptual demonstration of the ability
to monitor the dye depth profile within the light active layer of
DSSCs by non-destructive means with high chemical specificity using
a recently developed non-destructive/non-invasive Raman method, micro-spatially
offset Raman spectroscopy (micro-SORS). Micro-SORS is able to probe
through turbid materials, providing the molecular identification of
compounds located under the surface, without the need of resorting
to a cross-sectional analysis. The study was performed on the photo-electrode
of DSSCs. This represents the first demonstration of the micro-SORS
concept in the solar cell area as well as, more generally, the application
of micro-SORS to the thinnest layer to date. A sample set has been
prepared with varying concentrations of the dye and the thickness
of the matrix consisting of a titanium dioxide layer. The results
showed that micro-SORS can unequivocally discriminate between the
homogeneous and inhomogeneous dye depth profiles. Moreover, micro-SORS
outcomes have been compared with the results obtained with destructive
time-of-flight secondary ion mass spectrometry measurements. The results
of the two techniques are in good agreement, confirming the reliability
of micro-SORS analysis. Therefore, this study is expected to pave
the way for establishing a wider and more effective monitoring capability
in this important field.