Electrodeposited ZnO—Nanowire/Cu<sub>2</sub>O Photovoltaic Device with Highly Resistive ZnO Intermediate Layer

Izaki, Masanobu; Ohta, Takayuki; Kondo, M.; Takahashi, Toshiaki; Mohamad, Fariza; Zamzuri, M.Z.M.; Sasano, Junji; Shinagawa, Tsutomu; Pauporté, Thierry

doi:10.1021/am502246j

Cited by 37 publications

(27 citation statements)

References 34 publications

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“…Based on the findings, all the samples before and after deposition of p-Cu 2 O thin film exhibited triangular with combination of pyramidal shape. This results was believed corresponding to [111]-plane of Cu 2 O in structural properties and consistent with previous reported study [10]. It was proved that both acidic (pH 6.3) and alkaline (pH 12.5) electrolytes facilitate contribution a stable condition for the growth of a Cu 2 O thin film [4].…”

Section: Morphological Characterizationsupporting

confidence: 92%

“…It was observed that the small grains agglomerated to form larger and denser grains thereby the surface was covered well with more number of pyramid shaped grains after deposition of p-Cu 2 O thin film as shown in Fig. 3b and c. Thus, more crystallites agglomerate to forms grains and the surface mobility enhanced indirectly [5,10]. These results were good agreeement with the highest intensity of p-Cu 2 O thin film for pH 12.5 at 2 h. The FE-SEM images for n-Cu 2 O before and after deposition of p-Cu 2 O at 1 h and 2 h are shown below.…”

Section: Morphological Characterizationmentioning

confidence: 87%

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Cu₂O-Based Homostructure Fabricated by Electrodeposition Method

et al. 2019

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The Cu2O-based homostructure thin film was successfully fabricated on FTO glass substrate using conventional electrodeposition method. Prior to the p-Cu2O thin film deposition, cyclic voltammetry (CV) measurement was carried out in order to obtain optimum deposition parameter. Based on the CV result, p-Cu2O thin film was deposited on n-Cu2O with deposition potential of −0.4 V vs Ag/AgCl, solution temperature of 40 • C and pH 12.5, respectively. The deposition time was varied and it was found that the optimum deposition time for Cu2O-based homostructurethin film was 2 h. Structural, morphological, and optical properties were characterized using Xray diffraction, field emission-scanning electron microscope and ultraviolet and visible absorption spectroscopy, respectively. The successful fabrication of homostructure was confirmed using photoelectrochemical measurement.

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Section: Morphological Characterizationsupporting

confidence: 92%

Section: Morphological Characterizationmentioning

confidence: 87%

Cu₂O-Based Homostructure Fabricated by Electrodeposition Method

et al. 2019

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“…The preparation of ZnO scaffold with a high conductivity must favor the electron transfer in the device and then the charge collection. According to Shinagawa et al, [ 32,36 ] the resistivity of the i-ZnO layer deposited in nitrate medium is several orders of magnitude higher than that prepared in chloride medium. The carrier concentration in as-grown ZnO NWs prepared in KCl with molecular oxygen precursor and low ZnCl 2 concentration was estimated at 6.2 × 10 19 cm −3 by Mora-Sero et al [ 33 ] and ≈10 20 by Konenkamp et al [ 34 ] The high carrier concentration is classically assigned to chlorine doping since chlorine content (defi ned as Cl/(Cl + Zn) at%) is found at about 1% in the NWs/NRs [ 32 ] and about 3% in the Z50 fi lms [ 30 ] and acts as an extrinsic donor dopant.…”

Section: Resultsmentioning

confidence: 99%

“…The electrical properties of ZnO layers prepared from molecular oxygen in a 5 mM zinc chloride solution have been recently characterized by Izaki et al [ 32 ] By Hall effect measurements, they found a resistivity of 4.4 × 10 −2 Ω.cm with a carrier concentration of 2.5 × 10 19 and a mobility of 9.6 cm 2 V −1 s −1 . The initial fi lms were grown in KCl medium with molecular oxygen precursor in order to yield n-type doped ZnO with a rather high carrier concentration.…”

Section: Resultsmentioning

confidence: 99%

Electrochemical Design of Nanostructured ZnO Charge Carrier Layers for Efficient Solid‐State Perovskite‐Sensitized Solar Cells

Zhang

Barboux

Pauporté

2014

Advanced Energy Materials

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125

103

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conduction and valence bands and also in the very high mobility of their charge carriers that allow an effi cient charge collection when sandwiched between an electron transport material (ETM), usually anatase TiO 2 , and a HTM. [ 12,13 ] The performances of perovskite sensitized solar cells (PSSCs) increased dramatically during the last two years and the record cell effi ciencies are now exceeding 16%. [ 14 ] Interest in the PSSCs mainly lies in the low temperature that can be used for the layer deposition and in the fact that all the active layers can be solution-processed. They open the gate to mass production at a very low-cost. [ 15 ] In this context, ZnO is a major candidate for the ETM layer. [ 16,17 ] ZnO is a wide bandgap semiconductor which can be grown with a high structural quality at low temperature by various techniques. [ 18,19 ] The conductivity of ZnO is several orders of magnitude higher than that of TiO 2 that favors the electron transport toward the back contact. [ 20 ] Moreover, during the last decade many works have developed the preparation of tailored nanostructured ZnO layers. [ 19,[21][22][23] However, in the literature, the effect of nanostructuration of ZnO in PSSC performances remains unclear. Mathews et al. [ 24 ] found a power conversion effi ciency (PCE) of 8.90% for nanorod ZnO layers prepared by chemical deposition with a signifi cant enhancement compared to the ZnO planar confi guration. On the other hand, Kelly et al. [ 16 ] have recently reported remarkably high effi ciencies using a thin layer of dense planar ZnO prepared by spin-coating.The effi ciency losses in the low-temperature processed PSSC originate mainly due to recombination at imperfect interfaces and structural or chemical defects in perovskite fi lms. Therefore, the development of low-cost high effi ciency solar cells requires an in-depth investigation on these aspects. Electron collection can be increased i) by using nanostructured ETM, [ 8,[24][25][26][27][28] ii) by using well-conducting oxide, and iii) by engineering the interface between the perovskite and the oxide layer. [ 16 ] The present work focuses on these three aspects in the case of ZnO layers prepared with tailored properties by electrochemical deposition. [ 29 ] The advantages of the technique include the deposition at low temperature of high quality material, the precise control of the (nano)structure morphology and thickness, the control of the electrical properties and the excellent electrical contact between the deposited layers and the The preparation of ZnO structured fi lms designed to act as electron transport layers in effi cient ZnO/perovskite CH 3 NH 3 PbI 3 /spirobifl uorene (spiro-OMeTAD) solid-state solar cells by electrochemical deposition is reported. Well-conducting ZnO layers are deposited in chloride medium and grown with tailored (nano)structures ranging from arrays of nanowires to a compact, well-covering fi lm. Moreover, the effect of a thin intermediate overlayer of ZnO conformally electrodeposited in nitrate medium and wit...

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“…The electrodeposition process has several advantages over other techniques including gas-phase deposition processes, but the conversion efficiency was limited at low level of 3.97% 2) . The short-circuit current density (Jsc) is a parameter affecting to the efficiency, and the maximum values of 7.4 and 7.1 mAcm -2 have been reported for the substrate- 2) and super-straight type PV devices of the electrodeposited Cu2O layer with a random orientation 3) . The <111>-oriented Cu2O layer has been prepared on Au (111) /Si (100) wafer substrate by elctrodeposition 4) and showed an increased mobility 5) , which closely related to the diffusion length of carriers and Jsc value.…”

Section: Introductionmentioning

confidence: 99%