Electrodeposition and characterization of CdS thin films on stainless steel and tin oxide substrates

Thermal analyses of compound semiconductors using differential scanning calorimetry. Application to compositional analyses of cathodically electrosynthesized cadmium telluride

“…The above thermodynamic expectations have been verified by experiment both by us (6, 10, 12, 28, 29) and by other authors (24, 25), and CdTe formation has been detected by XRD (4,5, 7), electron spectroscopies (5-8), X-ray fluorescence (EDAX) (11,12), ( ) (6, 9,10), and cyclic photovoltammetry (30). Panicker et al ( 24) characterized the film composition in terms of their rest potentials, £rest, in the deposition bath.…”

Electrochemical Fabrication of CdS Nanowire Arrays in Porous Anodic Aluminum Oxide Templates

“…All diffraction peaks could be assigned to CdS, Al, and AAO, without any trace of elemental Cd or S. Additionally, the resonance Raman spectra and the optical band gap 13 correspond well to those of CdS. All of this together with the available data on the electrodeposition of CdS from DMSO 14,17,19,20 makes us confident that the deposited material is n-CdS, probably doped with Cd. Although the presence of a dopant may affect the crystal structure of the deposited CdS slightly, we do not expect this effect to depend of the nanowire diameter.…”

“…This orientational effect for Pt\CdS films has been reported previously; however, our data differ from that of Baranski et al, 19 who observed only one intense diffraction peak (d 002 ) 3.34 Å) for a 5 µm Pt\CdS film electrodeposited from the same electrolyte as was used in this study. Fatas et al 20 report that increasing the deposition temperature in the range 70-160 °C caused the grain size of the CdS deposit to increase and the degree of c-axis orientation to decrease as evidenced by the appearance of new diffraction peaks belonging to the hexagonal phase. In contrast, the relative intensities of the diffraction peaks of our AAO\CdS samples are not observed to change significantly from 100 to 160 °C (Figure 5, mean pore diameter 9 nm), implying that the preferred c-axis orientation is preserved.…”

Optical properties of chemical bath deposited CdS thin films

“…The near stoichiometric sample has the highest band gap, 2.43 eV, which is similar to the reported values. [16][17][18][19] The change E g is about 98 meV when Cd/S ratio deviates by 26% from unity. When the most stoichiometric film is annealed in vacuum, it is found to be sulfur excess whereas, airannealed films have excess cadmium.…”