Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

Abstract

In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along ⟨311⟩ directions for the branches and along ⟨111⟩ for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

Structure and Electronic Properties of InSb Nanowires Grown in Flexible Polycarbonate Membranes

“…The Raman spectrum for all three deposition potentials is dominated by the peak at about 147–149 cm−1 and a wide peak centered at 120 cm−1. These peaks have been reported by other works [33,38], and are assigned to transverse optical (TO) and transverse acoustic (TA) and 2TA phonons. They have been attributed to defects and also to the amorphous/polycrystalline nature of the nanowires [39,40,41].…”

“…InSb nanowire growth occurred under potentiostatic conditions through a multi-step reaction process involving various ions responsible for the electrochemical deposition of InSb [33,34]. With reference to Ag/AgCl electrode, the balanced reaction and the overall electrode potential for indium (In) and antimony (Sb) deposition is expressed as:In+3+3normale−→In(E0=−0.46V), SbO++2normalH++3e−→Sb+H2normalO(E0=+0.39V).…”

“…The magnitude of the current density and the growth period depend on the electrolyte composition, nature of the working electrode, pH of solution, deposition potential, etc. ; (iv) a limiting (steady state) current, where the current magnitude is limited by diffusion of the ions to the top surface of the template [33].…”

Checked patterned elemental distribution in AlGaAs nanowire branches via vapor–liquid–solid growth

“…Based on the analysis above, we can deduce the growth mechanism of the structures, which is attributed to preferential Ga accumulation at the rough surface of the Al-rich, self-formed shell. In previous studies the growth of the branches occurred deliberately via techniques such as sequential seeding, 26 electrodeposition, 27 droplet confinement 24 or strain-related synthesis. 28 In the current work growth of the branches occurs spontaneously based on the aforementioned mechanism.…”

Indium Antimonide Nanowires: Synthesis and Properties

“…InSb NWs have distinct physical properties revealed by simple optical reflectance measurements and analogy with the identical results from a bulk InSb wafer; it is obvious that antireflection coating can be fabricated from such a NW arrays and could be useful for photon management studies and nanostructured energy harvesting [ 90 ].…”