Electrodeposition of PbS multilayers on Ag(111) by ECALE

Fernandes, V. C.; Salvietti, Emanuele; Loglio, Francesca; Lastraioli, Elisa; Innocenti, Massimo; Mascaro, Lúcia H.; Foresti, Maria Luisa

doi:10.1007/s10800-008-9767-0

Cited by 26 publications

(12 citation statements)

References 26 publications

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“…E-ALD technique has been successfully used to fabricate ultrathin films of metal sulfides on silver electrodes by alternating the underpotential deposition of metal and sulfur. These compounds include cadmium sulfide (CdS) [2,14,15], zinc sulfide (ZnS) [2], nickel sulfide (NiS) [4], lead sulfide (PbS) [16], copper sulfides (Cu x S) [17,18] and tin sulfides (Sn x S y ) [19]. A typical E-ALD cycle includes the underpotential deposition of sulfur followed by the surface limited reaction (SLR) of metal on S-covered Ag.…”

Section: E-ald Of Binary M X S Y Semiconductors On Ag(111)mentioning

confidence: 99%

“…E-ALD of PbS and NiSLead sulfide (PbS) and nickel sulfide (NiS) are binary semiconductors that have received considerable attention for a variety of applications, such as detectors[23], sensing materials[24] and solar cells[25]. A complete electrochemical study of PbS multilayers has been reported by Fernandes et al[16]. The Pb ad cannot be formed on S-covered silver electrodes because of partial redissolution of sulfur.…”

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confidence: 99%

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E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Salvietti¹,

Giaccherini²,

Gambinossi³

et al. 2018

Semiconductors - Growth and Characterization

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Technological development in nanoelectronics and solar energy devices demands nanostructured surfaces with controlled geometries and composition. Electrochemical atomic layer deposition (E-ALD) is recognized as a valid alternative to vacuum and chemical bath depositions in terms of growth control, quality and performance of semiconducting systems, such as single 2D semiconductors and multilayered materials. This chapter is specific to the E-ALD of metal chalcogenides on Ag single crystals and highlights the electrochemistry for the layer-by-layer deposition of thin films through surface limited reactions (SLRs). Also discussed herein is the theoretical framework of the under potential deposition (UPD), whose thermodynamic treatment open questions to the correct interpretation of the experimental data. Careful design of the E-ALD process allows fine control over both thickness and composition of the deposited layers, thus tailoring the optoelectronic properties of semiconductor compounds. Specifically, the possibility to tune the band gap by varying either the number of deposition cycles or the growth sequence of ternary compounds paves the way toward the formation of advanced photovoltaic materials.

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Section: E-ald Of Binary M X S Y Semiconductors On Ag(111)mentioning

confidence: 99%

mentioning

confidence: 99%

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Salvietti¹,

Giaccherini²,

Gambinossi³

et al. 2018

Semiconductors - Growth and Characterization

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“…Indeed, we have used ECALE to successfully obtain a number of binary and ternary semiconductor thin films. These compounds include cadmium sulfide (CdS), 7-11 cadmium telluride (CdTe), 12 cadmium selenide (CdSe), 13 zinc sulfide (ZnS), 14 zinc selenide (ZnSe), 14 nickel sulfide (NiS), 15 lead sulfide (PbS), [16][17][18] copper sulfide (CuS), 19,20 and indium arsenide (InAs). 21 A specific need in our field of work is for the structural characterization-with the use of opportunistic analytical techniques-of the ultra-thin films that are obtained from the electrochemical deposition techniques.…”

Section: 1117/21201512006249 Page 2/3mentioning

confidence: 99%

Fabricating energy devices with low environmental impacts

Innocenti¹,

Benedetto²,

Lavacchi³

et al. 2016

SPIE Newsroom

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Techniques such as electrochemical atomic layer epitaxial deposition can be used to grow high-quality pseudo-2D layers of photovoltaic materials.Efforts to reduce the rate of carbon emissions from industry, 1 as well as the impending economic and social problems that could arise from the depletion of fossil fuels, 2 are the two driving forces for the development of devices that can generate electric power from renewable sources. It is necessary for research and development in this field to satisfy a few major requirements. In the last few decades, the increasing demand for high-tech applications has led to increasing solicitation of mineral deposits and has brought many rare metals to the brink of irreversible depletion. 3 It is therefore necessary for new devices to be based on abundant materials that are available on a global or local scale. The whole 'life cycle' of the materials must also be environmentally friendly (i.e., the materials must be non-toxic and easily recycled). Moreover, the materials must be energetically favorable, i.e., they must involve low-energy consumption processes during all the phases of the life cycle (production, to maintenance, to decommission, to recycling). This final aspect-which can be determined accurately through a full life cycle assessment (LCA)-depends on the energy costs and energy conversion efficiency of the device itself. In a full LCA, several parameters are estimated. These include the payback time (time required to earn the energy costs of the production process), the energy return on energy investment (ratio between the energy produced by and the energy costs of the system along the whole life cycle), 4 and the net energy (the energy delivered to society for discretionary uses after all the energetic costs are subtracted from the energy produced). This last figure of merit (i.e., the net energy) is a crucial parameter for defining energy policy. 4 All these requirements for renewable energy devices can be met satisfactorily by solar cells that are based on pseudo-ternary sulfides, such as stannite (Cu 2 FeSnS 4 ), kuramite (Cu 3 SnS 4 ), and kesterite (Cu 2 ZnSnS 4 ). 5 Kesterite-type semiconductors are Figure 1. Schematic illustration of the electrochemical atomic layer epitaxial deposition (ECALE) technique for the growth of quaternary metallic compound thin films.generally synthesized by high-temperature solidification, in the vapor phase, or under high-vacuum conditions. Other easier and cheaper methods (e.g., from aqueous solutions), however, can also be considered. Electrochemical techniques, for example, are particularly suitable for satisfying the requirements. Indeed, with these methods, a low cost can be achieved with relatively simple instrumentation, low working temperatures, and accurate control of the experimental parameters. 6 Furthermore, morphological, structural, and compositional control of the final deposited film can be obtained.In our work, we use a particular electrochemical techniqueknown as electrochemical atomic layer epitaxial deposition...

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“…PbS thin films have been deposited by various solution chemical method, typically including chemical bath deposition (CBD) [22][23][24][25][26][27], electrochemical deposition [28,29], spray pyrolysis [30,31], photochemical deposition [32] and successive ionic layer absorption reaction (SILAR) method [33,34]. The aqueous CBD, as a popular solution growth technique, has been developed to fabricate PbS thin films.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Deposition and characteristics of PbS thin films by an in-situ solution chemical reaction process

Wang

et al. 2015

Thin Solid Films

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Electrodeposition of PbS multilayers on Ag(111) by ECALE

Cited by 26 publications

References 26 publications

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

E-ALD: Tailoring the Optoeletronic Properties of Metal Chalcogenides on Ag Single Crystals

Fabricating energy devices with low environmental impacts

Deposition and characteristics of PbS thin films by an in-situ solution chemical reaction process

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