Electroluminescence from Serpentine Carbon Nanotube Based Light‐Emitting Diodes on Quartz

Yu, Deming; Wang, Sheng; Ye, Linhui; Li, Wei; Zhang, Zhiyong; Chen, Yabin; Zhang, Jin; Peng, Lian‐Mao

doi:10.1002/smll.201302287

Cited by 13 publications

(11 citation statements)

References 35 publications

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“…Under these cases, significant Joule heating occurs, as evidenced by Raman G band frequency shifts, ,− and it has become clear that, in these previous works, Joule heating caused thermal emission as the main mechanism of light emission. Additionally, electrically driven light emission from silicon-based pn-junctions and FETs was also reported. − Other than FET-based devices, electrically driven light emission was also reported using other approaches, including asymmetric contacts and arrays of aligned CNTs. − Under very high electric fields (0.5 MV/cm), light emission via avalanche breakdown was also reported in air-suspended CNT FETs. ,, Under these conditions, the light emission efficiencies were much higher (three orders of magnitude) than former reports of electrically driven light emission in the literature, and the G band frequency was monitored to rule out thermal emission explicitly. ,− …”

Section: Introductionmentioning

confidence: 87%

Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions

Wang¹,

Yang²,

Wang³

et al. 2020

ACS Appl. Mater. Interfaces

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There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral characteristics that provide important information. Here we report suppression of incandescence via Auger recombination in suspended carbon nanotube pn-junctions generated from dual-gate CNT field-effect transistor (FET) devices. By applying equal and opposite voltages to the gate electrodes (i.e., V g1 = −V g2 ), we create a pn-junction within the CNT. Under these gating conditions, we observe a sharp peak in the incandescence intensity around zero applied gate voltage, where the intrinsic region has the largest spatial extent. Here, the emission occurs under high electrical power densities of around 0.1 MW/cm 2 (or 6 μW) and arises from thermal emission at elevated temperatures above 800 K (i.e., incandescence). It is somewhat surprising that this thermal emission intensity is so sensitive to the gating conditions, and we observe a 1000-fold suppression of light emission between V g1 = 0 and 15 V, over a range in which the electrical power dissipated in the nanotube is roughly constant. This behavior is understood on the basis of Auger recombination, which suppresses light emission by the excitation of free carriers. Based on the calculated carrier density and band profiles, the length of the intrinsic region drops by a factor of 7−25× over the range from |V g | = 0 to 15 V. We, therefore, conclude that the light emission intensity is significantly dependent on the free carrier density profile and the size of the intrinsic region in these CNT devices.

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Section: Introductionmentioning

confidence: 87%

Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions

Wang¹,

Yang²,

Wang³

et al. 2020

ACS Appl. Mater. Interfaces

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“…A two‐terminal CNT diode structure compromised of asymmetrically contacted metals at the two ends of s‐SWCNTs has also been proposed (Figure c) . The Fermi levels of the two asymmetric electrodes should match the valance and conduction bands of s‐SWCNTs, respectively.…”

Section: Transistorsmentioning

confidence: 99%

Recent Advances in Applications of Sorted Single‐Walled Carbon Nanotubes

Bati

Batmunkh

et al. 2019

Adv Funct Materials

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Single-walled carbon nanotubes (SWCNTs) exhibit outstanding properties that make them appealing in a wide range of applications. However, their properties are variable depending on the tube helicity (chirality), which has been a challenge for a long time and needs to be effectively controlled. In recent years, tremendous efforts have been made to control the electrical type/chirality of nanotubes through both direct controlled synthesis and postsynthesis separation methods. Driven by these breakthroughs, the applications of separated families of SWCNTs in various fields have emerged as a new topic of research. In this Review, an overview of recent advances in the use of highly purified and well-separated SWCNTs in a comprehensive range of applications is presented including photovoltaics, transistors, batteries, sensors, light emitters, biological/medical fields, and others. Finally, important future directions for the utilization of separated SWCNTs in these fields are provided.

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“…Using asymmetric contacts it is notably possible to advantageously favor electron injection (or extraction) at one contact and hole injection (or extraction) at the other. Such configurations are of particular relevance for optoelectronics . Carrier injection (electrons and holes) could also be modulated using a split‐gate (local gates) approach .…”

Section: Introductionmentioning

confidence: 99%

Polarization‐Sensitive Single‐Wall Carbon Nanotubes All‐in‐One Photodetecting and Emitting Device Working at 1.55 µm

Balestrieri

Keita

Durán-Valdeiglesias

et al. 2017

Adv Funct Materials

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International audienceFunctional and easy-to-integrate nanodevices operating in the telecom wavelength ranges are highly desirable. Indeed, the pursuit for faster, cheaper, and smaller transceivers for datacom applications is fueling the interest in alternative materials to develop the next generation of photonic devices. In this context, single wall carbon nanotubes (SWNTs) have demonstrated outstanding electrical and optical properties that make them an ideal material for the realization of ultracompact optoelectronic devices. Still, the mixture in chirality of as-synthesized SWNTs and the necessity of precise positioning of SWNT-based devices hinder the development of practical devices. Here, the realization of operational devices obtained using liquid solution-based techniques is reported, which allow high-purity sorting and localized deposition of aligned semiconducting SWNTs (s-SWNTs). More specifically, devices are demonstrated by combining a polymer assisted extraction method, which enables a very effective selection of s-SWNTs with a diameter of about 1–1.2 nm, with dielectrophoresis, which localizes the deposition onto silicon wafers in aligned arrays in-between prepat-terned electrodes. Thus, long semiconducting nanotubes directly contact the electrodes and, when asymmetric contacts (i.e., source and drain made of different metals) are used, each device can operate both as photoemitter and as photodetector in the telecom band around 1.55 µm in air at room temperature

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Electroluminescence from Serpentine Carbon Nanotube Based Light‐Emitting Diodes on Quartz

Cited by 13 publications

References 35 publications

Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions

Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions

Recent Advances in Applications of Sorted Single‐Walled Carbon Nanotubes

Polarization‐Sensitive Single‐Wall Carbon Nanotubes All‐in‐One Photodetecting and Emitting Device Working at 1.55 µm

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