Electrolyte for electrochemical C-V profiling of InP- and GaAs-based structures

Four-point probe electrical measurements on p-n-p InP structures

“…In brief, they conclude that the mechanism of diffusion of InP cannot be determined from their data alone, believing however that it will be similar to that operating in GaAs and GaP. This is a parallel mode diffusion with interstitial diffusion being dominant at high concentrations and temperatures [1,2,3,[16][17][18][19][20][21].…”

Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling

“…Electrolytes are readily available for ECV profiling for almost all the important semiconductor materials such as silicon (Si) [5,6], silicongermanium [7], silicon carbide [8], gallium arsenide (GaAs), indium phosphide (InP), GaAs and InPbased materials [9], gallium nitride [10,11], zinc selenide [12,13], etc. To the best of our knowledge, there has been no suitable electrolyte and no detailed report available on the successful ECV profiling of aluminium indium arsenide (AlInAs).…”

Tecnologias Alternativas Para Fabricação De Células Solares De Elevada Eficiência Com Redução De Custo E Consumo De Ge

“…As medidas de capacitância fornecem informações sobre densidade de dopagem. O perfil de profundidade é obtido pela corrosão eletrolítica do semicondutor entre as medições de capacitância (62,63). A figura A.…”