Electromigration induced aluminum atom migration retarding by grain boundary structure stabilization and copper doping

Hasunuma, M.; Toyoda, Hiroshi; Kaneko, H.

doi:10.1016/s0026-2714(99)00167-5

Cited by 9 publications

(6 citation statements)

References 23 publications

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“…[1998], Hauschildt [1998], Hasunuma [1999], Buerke [1999]. Flux divergence sites were found to be either at the edge of the cathode end, simply because no atom replacement is possible, or at intersections near the line end where a grain boundary and the interface between metal line and passivating dielectric meet.…”

Section: Influence Of Microstructure On Emmentioning

confidence: 99%

Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Hauschildt

Gall²,

Thrasher³

et al. 2004

MRS Proc.

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Electromigration (EM) failure statistics and the origin of the lognormal deviation (σ) for Cu interconnects have been investigated by analyzing the lifetime statistics and void size distributions at various stages during EM testing. Experiments were performed on 0.18 μm wide Cu interconnects with tests terminated after specific amounts of resistance increases, or after a specified test time. Void size distributions of resistance-based, as well as time-based EM tests were obtained using focused ion beam (FIB) microscopy. The lifetime and void size distributions were found to follow lognormal distribution functions. The σ values of EM lifetime and time-based void size distributions decrease with higher percentages of resistance increase, reaching an asymptotic value of σ ∼ 0.14. In contrast, σ values of resistance-based void size distributions are significantly smaller and do not show an obvious dependence on time. The statistics of resistance-based void size distributions can mainly be accounted for by geometrical variations of the void shape, while the statistics of time-based void size distributions requires consideration of kinetic aspects of the EM process. The σ values of EM lifetime distributions at long times can be simulated based on measured void size distributions, taking into account geometrical and experimental factors of EM. In contrast, for short times the statistics of initial void formation and the kinetics of interfacial mass transport have to be considered.

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Section: Influence Of Microstructure On Emmentioning

confidence: 99%

Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Hauschildt

Gall²,

Thrasher³

et al. 2004

MRS Proc.

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“…For example, for polycrystalline thin lm heterostructures, the strong interfacial interaction between two materials can inuence the growth mechanism and the microstructures of lms. 15,30 In our previous work, we controlled the grain orientations of 10ScSZ electrolyte lm using an amorphous alumina interlayer and observed enhanced ionic conductivity. 30 It is speculated that such interface effect on lm structures can be achieved in polycrystalline oxide multilayers, which is promising to tune the conductivity of electrolyte by rational design of multilayered structure.…”

Section: Introductionmentioning

confidence: 99%

“…15,30 In our previous work, we controlled the grain orientations of 10ScSZ electrolyte lm using an amorphous alumina interlayer and observed enhanced ionic conductivity. 30 It is speculated that such interface effect on lm structures can be achieved in polycrystalline oxide multilayers, which is promising to tune the conductivity of electrolyte by rational design of multilayered structure. Therefore, systematic investigations on the correlation between microstructures and layer number and its effect on the ionic conductivity of polycrystalline oxide multilayer, i.e.…”

Section: Introductionmentioning

confidence: 99%

Contrary interfacial effects for textured and non-textured multilayer solid oxide electrolytes

2016

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“…Also, the presence of incubation in electromigration will require a threeparameter lognormal distribution to describe the test data as in the case of Al interconnection. This incubation period consists of the process of Al grain growth and the sweeping of Cu participates in the Al-Cu line along the grain boundary before Al electromigration can occur [7]. The incubation period is commonly referred to as the failure-free time in the field of statistics.…”

Section: Introductionmentioning

confidence: 99%

Unveiling the electromigration physics of ULSI interconnects through statistics

Tan

Raghavan

2007

Semicond. Sci. Technol.

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Electromigration is an important failure phenomenon in ULSI. There are several underlying physical mechanisms in an electromigration process depending on the stress conditions. In this work, we use various statistical techniques to investigate the number of such mechanisms for a given set of electromigration data. The statistical distribution of each mechanism can be found and the failure units that belong to the different statistical distributions can be identified. Through this methodology, the existence of the incubation phenomena for aluminum electromigration is shown, and the time for the incubation is found to be different for different underlying mechanisms.

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Electromigration induced aluminum atom migration retarding by grain boundary structure stabilization and copper doping

Cited by 9 publications

References 23 publications

Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Contrary interfacial effects for textured and non-textured multilayer solid oxide electrolytes

Unveiling the electromigration physics of ULSI interconnects through statistics

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